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Doping laser system SolarLase-G3SE
power

doping laser system
doping laser system
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Characteristics

Applications
doping
Other characteristics
power
Power

7,000 W

Description

Wafer Size: 156-166mm Function: SE Laser Doping Platform: Turntable and Galvo scanner High accuracy camera for alignment SolarLase-G3SE is a SE laser doping system for high efficiency c-Si solar cell production at 7000+WPH. Its thermally-stable granite optics plate can house two 532nm lasers, each with its own independent beam delivery path. The beam delivery paths are flexible, where beam diameter adjustments, laser power adjustment, and shutter control can be individually controlled. The granite optics plate is essential for stable optical and mechanical performance. SolarLase-G3SE is a Class-I laser safe system; and it is also equipped with debris removal system to keep the work piece clean. SolarLase-G3SE offers excellent wafer alignment capabilities as next generation high efficiency c-Si cells require ever more precise alignment than before. High-magnification cameras can detect wafer edges or marks on the wafer precisely, enabling precise overlay of laser-written patterns between two successive processing steps. The application software of SolarLase-G3SE offers easy-to-use friendly user interface, allowing recipe creation, editing, saving and loading, making wafer processing highly efficient. For each SolarLase-G3SE system, we evaluate customer-specific requirements and plans so we can customize the tool to better suit individual customer needs.
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.