PIN photodiode S14536 series

silicon

Si detectors for high-energy particles The S14536 series are large-area photodiodes specifically designed for the direct detection of high-energy charged particles and X-rays. These detectors are mounted on a PC board with an opening for the purpose of ΔE/E detection of charged particles and X-rays. Features -Large area -Low dark current -High voltage tolerance S14536-320 Specifications Photosensitive area - 48 × 48 mm Chip thickness - 320 ± 15 μm Dead layer thickness (Front side) - 1.5 μm Dead layer thickness (Rear side) - 20 μm Full depletion voltage max. - 100 V Dark current max. - 100 nA Cuttoff frequency - 3 MHz Terminal capacitance - 860 pF S14536-500 Specifications Photosensitive area : 48 × 48 mm Chip thickness : 500 ± 15 μm Dead layer thickness (Front side) : 1.5 μm Dead layer thickness (Rear side) : 20 μm Full depletion voltage max. : 170 V Dark current max. : 200 nA Cuttoff frequency : 5 MHz Terminal capacitance : 550 pF