Continuous wave laser diode L13395-04

infraredsemiconductor

This product is a surface-emitting semiconductor laser with a photonic crystal structure that features a narrow spot beam pattern (narrow beam spread angle, circular shape) and a narrow spectral linewidth. The photonic crystal is an optical nanostructure having a periodic refractive index distribution with dimensions nearly equal to the light wavelengths. In this product, light is amplified and diffracted by the photonic crystal mounted in the vicinity of a light amplification layer called an active layer, and the amplified light is output as a laser beam in a direction perpendicular to the surface. Even with a large area, this laser allows a stable resonance action and so delivers a high quality beam with a narrow radiant angle. Specifications Type number : L13395-04 Oscillation mode : CW Operating temperature : 0 ℃ to +30 ℃ Storage temperature : -30 ℃ to +85 ℃ Peak emission wavelength typ. : 940 nm Radiant output power max. : 200 mW Radiant output power typ. : 150 mW Operating current max. : 850 mA Spectral radiation half bandwidth max. : 1 nm Operating voltage max. : 2 V Emitting area : 200 × 200 μm Beam spread angle (Horizontal) max. : 1 ° Beam spread angle (Vertical) max. : 1 ° Lasing threshold current typ. : 250 mA Package : φ9.0 CD