InGaAs photodiode G12183-210KA-03
PIN

InGaAs photodiode
InGaAs photodiode
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Characteristics

Type
InGaAs
Mounting
PIN

Description

Long wavelength type (cutoff wavelength: 2.55 μm) Features - Cutoff wavelength: 2.55 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity - High reliability - High-speed response - High short-wavelength sensitivity: 0.4 A/W (λ=900 nm) Specifications Photosensitive area : φ1.0 mm Number of elements : 1 Package : Metal Package Category : TO-66 Cooling : Two-stage TE-cooled Spectral response range : 0.9 to 2.55 μm Peak sensitivity wavelength (typ.) : 2.3 μm Photosensitivity (typ.) : 1.3 A/W Dark current (max.) : 100 nA Cutoff frequency (typ.) : 4 MHz Terminal capacitance (typ.) : 500 pF Noise equivalent power (typ.) : 2×10-13 W/Hz1/2 Measurement condition : Typ. Tc=-20 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=10 mV, Cutoff frequency: VR=0 V, RL=50 Ω, Terminal capacitance: VR=0 V, f=1 MHz

Exhibitions

Meet this supplier at the following exhibition(s):

ACHEMA 2024
ACHEMA 2024

10-14 Jun 2024 Frankfurt am Main (Germany) Hall 11.1 - Stand F62

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