Silicon photodiode S1114 series

Photodiodes for electron beam detection Photodiodes for detecting backscattered electrons in scanning electron microscopes (SEM). S11141-10 High sensitivity, direct detection of low energy (1 keV or more) electron beams Features -Direct detection of low energy (1 keV or more) electron beams with high sensitivity -High gain: 300 times high detection efficiency: 72 % (incident electronenergy: 1.5 keV) -Large photosensitive area size: 10 × 10 mm -φ2.0 mm hole in center of photosensitive area -Thin ceramic package -Uses a wiring board made of less magnetic materials S11142-10 High sensitivity, direct detection of low energy (1 keV or more) electron beams Features -Direct detection of low energy (1 keV or more) electron beams with high sensitivity -High gain: 300 times high detection efficiency: 72 % (incident electronenergy: 1.5 keV) -Large photosensitive area size: 14 × 14 mm -φ2.0 mm hole in center of photosensitive area -4-element photodiode -Thin ceramic package -Uses a wiring board made of less magnetic materials