CCD image sensor S16001-1007S

CCD image sensor
CCD image sensor
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High sensitivity in the near infrared region: QE=36% (λ=1000 nm), back-thinned type FFT-CCD, One-stage TE-cooled type This FFT-CCD for measurement has improved sensitivity in the near infrared region of 800 nm or above. In addition to having near infrared high sensitivity, it can be used as an image sensor having a long side aligned along the height direction of the photosensitive area by doing the binning operation, which makes it suitable as a detector for Raman spectroscopy. The binning operation offers significant improvement in S/N and signal processing speed compared with methods by which signals are digitally added by an external circuit. Pixel size is 24 × 24 µm and the photosensitive area size is 24.576 (H) × 2.928 (V) mm (number of effective pixels: 1024 × 122 pixels). Pin layout and drive conditions are the same as the Hamamatsu S7030/S7031 series. Features - High near infrared sensitivity: QE=36% (λ=1000 nm) - Pixel size: 24 × 24 μm - Line/pixel binning capabilities - MPP operation Specifications • Type : Binning type • NIR enhanced type • Image size : 24.576 x 2.928 mm • Number of effective pixels : 1024 x 122 pixels • Pixel size : 24 x 24 μm • Spectral response range : 200 to 1100 nm • Line rate (typ.) : 160 lines/s • Line rate (max.) : 387 lines/s • Dark current (typ.) : 200 e-/pixel/s • Readout noise (typ.) : 8 e- rms • Cooling : One-stage TE-cooled type • Window material : AR-coated sapphire • Package : Ceramic • Dedicated driver circuit : C7041 • Measurement condition : Typ. Ta=25 ℃, Dark current: MPP mode, unless otherwise noted


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