CMOS image sensor G14714-1024DG
InGaAsnear-infraredlinear

CMOS image sensor - G14714-1024DG - HAMAMATSU - InGaAs / near-infrared / linear
CMOS image sensor - G14714-1024DG - HAMAMATSU - InGaAs / near-infrared / linear
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Characteristics

Technology
CMOS, InGaAs
Spectrum
near-infrared
Other characteristics
linear

Description

The G14714-1024DG is an InGaAs linear image sensor designed for foreign object detection. The CMOS chip consists of charge amplifiers, shift registers, and timing generator. Charge amplifiers are configured with CMOS transistor array and are bump-bonded to each pixel of the InGaAs photodiode array. Since the signal from each pixel is read out in charge integration mode, high sensitivity and stable operation are attained in a wide spectral response range. The signal processing circuit on the CMOS chip enables the selection of an optimum conversion efficiency (CE) for your application from the available four types using external voltage. Features - High-speed line rate: 40000 lines/s max. - High-speed data rate: 15 MHz max. - Selectable from four conversion efficiency types - Built-in timing generator - Built-in temperature sensor - Room temperature operation Specifications • Image size : 12.8 x 0.25 mm • Pixel size : 12.5 x 250 μm • Pixel pitch : 12.5 μm • Number of total pixels : 1024 pixels • Package : Ceramic • Cooling : Non-cooled • Line rate (max.) : 40000 lines/s • Spectral response range : 950 to 1700 nm • Dark current (max.) : 50 pA • Measurement condition : Typ. Ta=25 ℃, unless otherwise noted

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