Silicon photodiode S series

infraredUV

For UV to visible, precision photometry; suppressed near IR sensitivity Features - High UV sensitivity: QE＝75 % (λ=200 nm) - Suppressed near IR sensitivity - Low dark current - High reliability Specifications • Photosensitive area : 1.1 × 1.1 mm • Number of elements : 1 • Package : Metal • Package category : TO-18 • Cooling : Non-cooled • Reverse voltage (max.) : 5 V • Spectral response range : 320 to 1000 nm • Peak sensitivity wavelength (typ.) : 720 nm • Photosensitivity (typ.) : 0.36 A/W • Dark current (max.) : 2 pA • Rise time (typ.) : 0.15 μs • Terminal capacitance (typ.) : 35 pF • Noise equivalent power (typ.) : 1.6×10-15 W/Hz1/2 • Measurement condition : Ta=25 ℃, Typ., Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted