Pulsed laser source NPFL-80IR-1.01

sub-nanosecondfiber opticinfrared

Machine Features

• Sub-nanosecond pulses (0.1–0.2 ns, customizable); near-diffraction-limited beam quality (M2 ≤1.5); max single-pulse energy 0.8 mJ
• All-fiber optical configuration providing stable output (power stability ≤3% over 24 h) and improved machining performance for semiconductor and photovoltaic processing
• Tunable repetition rate 100–2000 kHz and power adjustment range 0–100% for process flexibility
• Compact footprint, fast response (<100 μs) and controlled beam parameters (spot size 3.0±0.2 mm, ellipticity typ. 92%)

Applications

• Cutting, drilling and scribing of glass, silicon and ceramics
• Thin-film patterning and micro-structuring of metals and thin films
• Permanent marking on glass, silicon, ceramic, metals and plastics

Technical Data Sheet
Machine Model: Infrared Sub-nanosecond Laser NPFL-80IR-1.01
Operating Mode: Pulsed
Average Power (W): 80
Central Wavelength (nm): 1064
Spectral Linewidth (nm): <30; 3dB Linewidth
Repetition Rate (kHz): 100-2000; Tunable
Pulse Width (ns): 0.1-0.2 ns; Customizable
Max. Single Pulse Energy (mJ): 0.8
Power Adjustment Range (%): 0-100
Response Time (μs): <100
Beam Quality (M2): ≤1.5
Power Stability (%): ≤3%; 24 h
Beam Spot Size (mm): 3.0±0.2; 1/e2
Beam Ellipticity (%): >90; Typ. 92%
Beam Offset (mm): <1.0
Beam Divergence Angle (mrad): <0.5

Technical Specifications

• Model: NPFL-80IR-1.01
• Mode: Pulsed
• Average Power: 80 W
• Wavelength: 1064 nm
• Spectral Linewidth: <30 nm (3 dB)
• Repetition Rate: 100–2000 kHz (tunable)
• Pulse Width: 0.1–0.2 ns (customizable)
• Max Single Pulse Energy: 0.8 mJ
• Power Adjustment: 0–100 %
• Response Time: <100 μs
• Beam Quality (M2): ≤1.5
• Power Stability: ≤3 % (24 h)
• Beam Spot Size: 3.0 ±0.2 mm (1/e2)
• Beam Ellipticity: >90 % (typ. 92 %)
• Beam Offset: <1.0 mm
• Divergence Angle: <0.5 mrad