Plasma wafer etching machine SPTS Omega®

The SPTS Omega® Rapier™ and DSi-v process modules offer high rate silicon etching for a variety of applications. Deep reactive ion etching (DRIE) of silicon uses the Bosch Process, which switches the plasma chemistry repeatedly between etch (SF6) and passivation(C4F8) steps, to create anisotropic etching of trenches or holes into silicon. With an installed base of >1500 DRIE process modules, KLA has decades of expertise in deep silicon etching for MEMS and other applications. The SPTS Rapier™ offers a dual plasma source design with independently controlled primary and secondary decoupled plasma zones, with independent dual gas inlets. This results in a highly concentrated and uniform distribution of radicals, resulting in high etch rates, excellent cross-wafer uniformity and control of CD, profile and feature tilt. This performance can be realized on wafers up to 300mm diameter. Inherent multi-mode flexibility also allows complementary oxide etching within the same hardware. The SPTS DSi-v module, offers excellent deep silicon etch performance for high load applications. The DSi-v is especially suited to large cavity etches for applications such as silicon microphones or pressure sensors. The Rapier™ and DSi-v are both compatible with the Omega® LPX, c2L or fxP wafer handling platforms, or integrated with different SPTS etch and deposition modules on a Versalis™ cluster platform. Deep reactive ion etch (DRIE) of Si for MEMS micromachining, TSVs, power trenches, backside Si vias Blanket Si etching for via reveal and wafer thinning Shallow oxide etch MEMS Advanced Packaging RF Device Manufacturing Power Device Manufacturing Photonics