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MOSFET transistor
power

MOSFET transistor
MOSFET transistor
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Characteristics

Type
MOSFET
Technology
power

Description

Features Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 40 pF) Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness Enhanced total power density SiC Boost Diode - no reverse recovery current

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