Chamber furnace

carbonitridingquenchingsintering

This Crystal Growing Furnace allows lab-sized crystals to be produced with the Bridgman ,Czochralski or Stepanov method. This technique is used to grow single crystals of semiconductor materials (silicon, germanium and gallium arsenide), metals, salts and synthetic gemstones. The pulling speed is adjustable and controls accurately as low as 0.001”/min. (0.025mm/min). A separate motor is provided to rotate the 3/8” seed rod. Our crystal growing option can also be fitted on select front loading MRF furnaces using the top chamber port, such as our Multi-application Laboratory Furnace or select Arc Melting Furnaces. General Specifications For crystal growth using Bridgman ,Czochralski or Stepanov method Adjustable pulling speed as low as 0.001”/min. (0.025mm/min) 8″ travel Adjustable seed rod rotation Fits easily in our 4″ x 8″ (101mm dia. X 203mm high) hot zone front loading furnaces Includes all electrical, mechanical and control components Details Chamber and Hot Zone The chamber is loaded from the front and contains a Hot Zone with a 3.0″ dia. x 6.0″ high usable zone and +/- 10°C temperature gradient. The heating element is a 1/2- 1/2 split design allowing the crucible with solute to be inserted straight into the zone onto the support plate. The furnace chamber is manufactured from double-walled stainless steel welded together and polished for a clean finish and good vacuum integrity. The hot zone assembly can be one of three choices: a graphite band element and rigid fibrous graphite insulation pack, a Moly-D rod element and ceramic insulation pack, or a high temperature metal mesh heating element and layered metal shielding.