1. Electricity - Electronics
  2. Electronic Component
  3. IGBT transistor
  4. MORNSUN Guangzhou Science & Technology Co.,Ltd.

IGBT transistor module QP12W05S-37

IGBT transistor module
IGBT transistor module
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QP12W05S-37 is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated DC-to-DC converter. The gate driver provides an over-current protection function based on desaturation detection and fault output. Feature: Built in high CMRR opto-coupler (CMR: Typical: 30kV/µs, Min.:15kV/µs) Single supply drive topology Built in the isolated type DC/DC converter for gate drive SIP package CMOS&TTL compatible Electrical isolation voltage between input and output is 3750VRMS (for 1 minute) Built in short circuit protection circuit with a pin for fault output Soft turn-off time is adjustable The drive signal is ignored in the blocking time and the protection circuit reset at the end of it Controlled time detect short circuit is adjustable Switching frequency up to 20kHz


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