wafer metrology system
S3000/S2000™ Series

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wafer metrology system wafer metrology system - S3000/S2000™ Series
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Characteristics

  • Type:

    for wafers

Description

High throughput focused beam laser ellipsometry and reflectometer system that provides accurate thickness and refractive index measurements for a wide range of materials for semiconductor process control.

The S2000 Series of metrology systems delivers the same superior measurement accuracy, repeatability and tool-to-tool matching as the S3000 systems. Utilizing Onto Innovation’s patented focused beam laser ellipsometry (FBE) system with optional deep ultraviolet reflectometry, visible reflectometry, the S2000 System has found widespread adoption in the specialty foundry, RF, MEMS market.

Applications

Ultrathin Gates
Oxides, Nitrides
Single and multilayer dielectrics
Thin metals (<100Å)
Hardmask layers
ARC/BARC
SiGe
SOI
Polysilicon
Resists
Thick Films
Etch rate and CMP monitoring
Film stress and wafer bow

Specifications

Multi-wavelength, multi-angle FBE offers excellent repeatability and intrinsic tool matching
Discrete laser wavelengths 633, 784 and 923nm.
Blue wavelength to enhance sensitivity for SiGe and SOI applications
Thickness capability from 10Å to 90µm
Single and Multi-layer T,n,k for true fabwide metrology
Laser ellipsometry offers excellent repeatability due to a very stable light source
190nm small site deep ultraviolet reflectometry (DUVR)