Bipolar phototransistor Radial T1 series
silicon

bipolar phototransistor
bipolar phototransistor
bipolar phototransistor
bipolar phototransistor
bipolar phototransistor
bipolar phototransistor
bipolar phototransistor
bipolar phototransistor
bipolar phototransistor
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Characteristics

Type
bipolar
Other characteristics
silicon
Current

Min.: 0.01 mA

Max.: 2.7 mA

Description

- Access Control & Security - Appliances & Tools - Package: clear epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Spectral range of sensitivity: (typ) 380 ... 1150 nm - High photosensitivity - High linearity - Available in groups
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