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PhotoMOS solid state relay AQZ10, AQZ20 series
60VDC1 Form Acompact

PhotoMOS solid state relay
PhotoMOS solid state relay
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Characteristics

Control voltage
60VDC
Contact configuration
1 Form A
Other characteristics
PhotoMOS, compact, slim, SIL
Switching current

Max.: 4,000 mA

Min.: 500 mA

Description

FEATURES 1.Slim SIL4-pin package (W) 3.5 x (D) 21.0 x (H) 12.5 mm (W) .138 x (D) .827 x (H) .492 inch The compact size of the 4-pin SIL package allows high density mounting. 2.Extremely low on-resistance 3.Control low-level signal Power PhotoMOS feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 4.Low-level off state leakage current of max. 10 uA 5.High I/O isolation voltage of 2,500 V 6.Eliminates the need for a counter electromotive protection diode in the drive circuit on the input side 7.Eliminates the need for a power supply to drive the power MOSFET 8.No restriction on mounting direction 9.Low thermoelectromotive force 10.Neither noise nor arc at contact 11.Sockets are also available (PAla-PS, PAla-PS-H) 12.Can be installed on the RT-3 relay terminal (Power PhotoMOS type)

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