1.Slim SIL4-pin package
(W) 3.5 x (D) 21.0 x (H) 12.5 mm (W) .138 x (D) .827 x (H) .492 inch The compact size of the 4-pin SIL package allows high density mounting.
2.Extremely low on-resistance
3.Control low-level signal
Power PhotoMOS feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
4.Low-level off state leakage current of max. 10 uA
5.High I/O isolation voltage of 2,500 V
6.Eliminates the need for a counter electromotive protection diode in the drive circuit on the input side
7.Eliminates the need for a power supply to drive the power MOSFET
8.No restriction on mounting direction
9.Low thermoelectromotive force
10.Neither noise nor arc at contact
11.Sockets are also available (PAla-PS, PAla-PS-H)
12.Can be installed on the RT-3 relay terminal (Power PhotoMOS type)