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PhotoMOS solid state relay AQY21xEH series
60VDC1 Form Ahigh-sensitivity

PhotoMOS solid state relay
PhotoMOS solid state relay
PhotoMOS solid state relay
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Characteristics

Control voltage
60VDC
Contact configuration
1 Form A
Other characteristics
PhotoMOS, high-sensitivity, DIP
Switching current

1 A, 50 A, 120 A, 130 A, 550 A

Description

FEATURES 1.Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2.Controls low-level analog signals PhotoMOS feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 3.High sensitivity and low on-resistance Can control max. 0.13 A load current with 5 mA input current. Low on-resistance of typ. 25Q (AQY210EH). 4.Low-level off state leakage current of max. 1 uA TYPICAL APPLICATIONS •Modem •Telephone equipment •Security equipment •Sensing equipment

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.