PhotoMOS solid state relay AQY21xEH series
60VDC1 Form Ahigh-sensitivity

PhotoMOS solid state relay
PhotoMOS solid state relay
PhotoMOS solid state relay
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Control voltage
Contact configuration
1 Form A
Other characteristics
PhotoMOS, high-sensitivity, DIP
Switching current

1 A, 50 A, 120 A, 130 A, 550 A


FEATURES 1.Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2.Controls low-level analog signals PhotoMOS feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 3.High sensitivity and low on-resistance Can control max. 0.13 A load current with 5 mA input current. Low on-resistance of typ. 25Q (AQY210EH). 4.Low-level off state leakage current of max. 1 uA TYPICAL APPLICATIONS •Modem •Telephone equipment •Security equipment •Sensing equipment


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