The PVA TePla physical vapor transport (pvt) system baSiC-T has been especially designed for Silicon Carbide (SiC) crystal growth by sublimation of a source powder at high temperatures. The baSiC-T system design is based on a modular concept and allows the use of substrates (seeds) up to 6´´ diameter.
New Generation SiC PVT Crystal Growth Furnace
Designed for Power Electronic Applications
high automation level for massproduction
Fab Management Software Solution available
small footprint, compact placement
Available for 4´´ and 6´´
Inductive heating using field-proven coil-designs
Low power consumption (approx. 10KW @ 2,200 °C stable control)
Mobile loading/unloading concept for hot zone
Superior Control System with
intuitive operation at a high level of automation
process visualisation with enhanced trending features
offline recipe setup solution with lots of recipe options by sets of parameter
long term process data logging, long term data retrieval
control system and visulisation works independently (safety concept)
system control loops configurable by sets of parameter
Excellent Safety Concept
CE conformity
different level of system safety components ensures safe operation
quality measurements and extended quality documentation
Close cooperation with customers, institutes and component suppliers