MOSFET RVS20N65 series

RVS20N65F/S/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Rongtech's DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES ♦20A, 650V, RosT,)=0.2i2@VGS=10V ♦New revolutionary high voltage technology ♦Ultra low gate charge ♦Periodic avalanche rated ♦Extreme dv/dt rated ♦High peak current capability