Relative pressure sensor t011 TBAR-UHIVS
resonantsiliconMEMS

Relative pressure sensor - t011 TBAR-UHIVS - SIAP+MICROS - resonant / silicon / MEMS
Relative pressure sensor - t011 TBAR-UHIVS - SIAP+MICROS - resonant / silicon / MEMS
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Characteristics

Pressure type
relative
Technology
silicon, MEMS, resonant
Other characteristics
high-accuracy, pre-calibrated
Pressure range

Min.: 0.5 bar
(7.25 psi)

Max.: 1.1 bar
(15.95 psi)

Precision

0.02 %

Long-term stability

0.005 %, 0.01 %

Process temperature

Min.: -40 °C
(-40 °F)

Max.: 60 °C
(140 °F)

Description

TBAR-UHIVS / USDI12 is equipped with a transducer featuring TERPS (Trench Etched Resonant Pressure Sensor) technology, a technology in which pressure is measured by observing the frequency variation of a micro-machined resonant silicon element. The sensor is housed in a special box that guarantees considerable resistance to dust and liquids, preserving excellent operating standards even in adverse and unfavorable climatic conditions. The sensor is housed in a special box that guarantees considerable resistance to dust and liquids, maintaining excellent operating standards even in adverse and unfavorable climatic conditions. A careful calibration process is carried out using a climatic chamber that allows the sensor to be calibrated and its operation adapted to specific altitudes, based on the actual environmental conditions of installation. The entire procedure is carried out accurately in order to achieve a high level of measurement precision and repeatability with respect to the operating temperature

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.