Silicon wafer with thermal dry Sio2

6 inch (150 mm)2 inch (50 mm)

DRY AND WET THERMAL OXIDATION OF SILICON WAFER The growth of a silicon oxide layer on a silicon surface (SiO2) can be carried out via high dry or wet oxidation processes. In both cases, silicon reacts with oxygen leading to a moving interface towards the substrate. We supply silicon wafers from 2" to 6" with: - Dry SiO2 thin films from 20nm to 300 nm - Roughness less than 3 Angstroms RMS - Wet thermal oxide from 50 nm up to 2 µm We accommodate all quantities, with a minimum batch order of 25 wafers. Dry oxidation typically takes place at temperatures from 850°C up to 1200°C and it demonstrates low growth rates. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.