LPE furnace ESY–10 TTT

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LPE Equipment for Flexible Use The Key-Features of the SOF Optoelectronics ESY–10 Concept are a high Capacity combined with the Flexibility for various Types of LPE-Production Technologies. A Capacity of 50 Wafers for a Five-Melt-Process and 200 Wafers for a One-Melt-Process demonstrate the high Potential of this Type of Equipment. In Addition to the standard ESY–10 Equipment for industrial Use, customer-designed Solutions with plenty of Options can be realised. The ESY–10 especially can be adapted to the Requirements of Research Institutes and Universities. The ESY–10 can be designed as a one- or double- (twin) System to reduce the Size of Footprint in the Cleanroom. Available Production Technologies Standard Infrared Power Infrared Power IR (Low UF) Power Window IR Power Infrared for IrDA 870 nm Power Infrared for IrDA 850 nm Low-Doped GaAs Technical Highlights Single or Twin-System Vertical LPE Quartz Tube 3 Heating Zones Constant Temperature Flat-Zone: 250 mm Temperatures up to 1,050°C Temperature Regulation Accuracy: ± 0.5 °C Min. Need of Space: 1.2 x 1.2 m² High Homogeneity of Layer-Thickness by Horizontal Layer-Growth Fully automatic Computer- Controlled Processing Data-Logging of all Process-Parameters Suitable for Multi-Layer Epitaxial Processes Suitable for Wafer Diameter up to 4″ Flexible Adaptation of Wafer-Capacity Minimum of 3 Wafers for Development Maximum of 200 Wafers for Production In Principle the ESY–10 Graphite System consists of alternating fixed and movable graphite Plates with Hollows holding the Substrates. The System Capacity is determined by the Stack Height of the Graphite Plates.