Semiconductor detector PV-5

dynamicinfraredIR

2.5 – 5.4 µm, ambient temperature PV-5 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 5.0 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Features: - High performance in the 2.5 - 5.4 µm spectral range - Ambient temperature operation - No bias required - No 1/f noise Parameter: PV-5 Material: MCT Type: Photovoltaic Immersion: Non-immersion Cooling: No Wavelength/ λopt/ µm: 5 Package: BNC, TO8, TO39 Window: No Detectivity/ D∗/ cm⋅Hz1/2⋅W−: ≥1,0x109 Time constant/ τ/ ns: ≤120