Optical detector PV-3TE-8

semiconductordynamicIR

3.3 – 8.6 µm, three-stage thermoelectrically cooled PV-3TE-8 is three-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 8.0 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects. Features: - High performance in the 3.3 - 8.6 µm spectral range - Three-stage thermoelectrically cooled - No bias required - No 1/f noise Parameter: PV-3TE-8 Material: MCT Type: Photovoltaic Immersion: Non-immersion Cooling: Three-stage Wavelength/ λopt/ µm: 8 Package: TO8, TO66 Window: wedged Al2O3 Detectivity/D∗/cm⋅Hz1/2⋅W−1: ≥3,0x108 Time constant/ τ/ ns: ≤45