{{product.productLabel}} {{product.model}}
{{#if product.featureValues}}{{product.productPrice.formattedPrice}} {{#if product.productPrice.priceType === "PRICE_RANGE" }} - {{product.productPrice.formattedPriceMax}} {{/if}}
{{#each product.specData:i}}
{{name}}: {{value}}
{{#i!=(product.specData.length-1)}}
{{/end}}
{{/each}}
{{{product.idpText}}}
{{product.productLabel}} {{product.model}}
{{#if product.featureValues}}{{product.productPrice.formattedPrice}} {{#if product.productPrice.priceType === "PRICE_RANGE" }} - {{product.productPrice.formattedPriceMax}} {{/if}}
{{#each product.specData:i}}
{{name}}: {{value}}
{{#i!=(product.specData.length-1)}}
{{/end}}
{{/each}}
{{{product.idpText}}}
Current: -16.4 A
Voltage: -60 V
P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, load switch and ...
Infineon Technologies AG
Voltage: 1,700, 2,500, 4,500 V
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching ...
Current: 600 A
Voltage: 1,200 V
Littelfuse IGBT modules offer high efficiency and fast switching speeds of modern IGBT technology in a robust and flexible format. Used for power control applications, Littelfuse offers an expanded portfolio ...
Sockets for Power IC Standard type Single in Line ●How to order ex: PDSA-1076-Sxx-GG x:Number of positions 2 to 16 Dielectric Strength - Insulation Resistance - - Operating Temperature EX.) PDSA-1076-Sxx-GG x ...
JC CHERRY INC.
Medium Size Socket for Power IC Through hole type Dual Style 2.54mm / 0.100" Pitch ●How to order ex: PDSP-CM1-Dxx-GG x: Number of positions 04,12,20 (Even Number) *Regarding to other number of position, please feel ...
JC CHERRY INC.
Power Transistor Sockets Pitch High Temperature Low Outgassing Multi-pole type High reliability round contact providing good electrical and mechanical performance. Power Transistor Test Sockets ...
JC CHERRY INC.
Voltage: 110, 265 V
TOPSwitch-HX incorporates a 700 V power MOSFET, high voltage switched current source, PWM control, oscillator, thermal shutdown circuit, fault protection and other control circuitry onto a monolithic device. Lower System Cost, Higher ...
Power Integrations
Current: 800 A
Voltage: 1,200 V
The NXH800H120L7QDSG is a rated half bridge IGBT power module. The integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency ...
Fairchild Semiconductor
Current: 95 A
Voltage: 40 V
RH6G040BG is a power MOSFET with low-on resistance and High power package, suitable for switching. Low on - resistance High Power small mold Package(HSMT8) Pb-free plating ; RoHS compliant Halogen Free
ROHM Semiconductor
Current: 150 A - 3,600 A
Voltage: 1,200, 1,700, 3,300, 4,500, 6,500 V
Hitachi Energy's IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules. The high-power HiPak IGBT modules feature low ...
Current: 0.4 A - 45 A
Voltage: 36 V - 70 V
ST offers a wide range of automotive-grade smart 3 and 5-pin low-side switches (OMNIFET) based on VIPower (vertical intelligent power) technology. This proprietary technology allows integration of complete digital and analog control and ...
STMicroelectronics
Current: 8 A
Voltage: 1,700 V
QC962-8A is an integrated hybrid IGBT driver. Its main function is to receive the square wave signal from the controller, and convert it into an isolated, amplified gâte signal which Controls the IGBT’s turn-on and turn off cycle.
MORNSUN Guangzhou Science & Technology Co.,Ltd.
Voltage: 7.5 V
... UHF band handheld radio Output stage for 700-800 MHz handheld radio Generic 6 W driver for ISM and broadcast final stage transistors
Current: 3,000, 1,300, 2,000 A
Voltage: 4,500, 5,200 V
StakPak is a family of high power insulated gate bipolar transistor (IGBT) press-packs and diodes in an advanced modular housing that guarantees uniform chip pressure in multiple-device stacks. Although the most common ...
Voltage: 45 V
The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier ...
Central Semiconductor
... designs HousingMiniSKiiP II 1 (42x40x16) (LLxBBxHH)42x40x16 SwitchesSeven Pack VCES in V600 ICnom in A6 TechnologyNPT IGBT (Ultrafast)
SEMIKRON
Voltage: -400 V - 1,000 V
Vishay is the world’s number-one manufacturer of low-power MOSFETs. The Vishay Siliconix power MOSFET product line includes devices in more than 30 package types, including the chipscale MICRO FOOT® and thermally advanced PowerPAK® families. ...
Voltage: 0.24 V - 3.5 V
NPN, PNP, and Complementary Transistors Broad portfolio of bipolar NPN and PNP transistors.
Current: 5, 20, 30, 50 A
Voltage: 600 V
The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced ...
Current: 0.8 A
Voltage: 50 V
DC Current Gain hFE Max.:400 DC Current Gain hFE Min.:160 Description:TO-92, 50V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO (V):50 VCE ...
Current: 25 mA
Voltage: 20 V
Collector Emitter Voltage - Vceo 20 V DC Collector Current - Ic - 25 mA Polarity - pol - NPN Power Dissipation - Ptot - 0.200 W Junction Temperature - Tjmax - 150 °C DC Current Gain - hfe - 85 - VcE - 10V - Ic - 7 mA Collector Saturation ...
Diotec
Current: 2 A
Voltage: 36 V
With this MOSFET, you can control a voltage of up to 36 Volts. With the pulse width modulation, the rootmean-square voltage can be lowered (f.e. to dim a LED light). COMPATIBLE WITH Arduino, Raspberry Pi, etc. CONTROL VOLTAGE min. ...
GaN HEMTs, GaAs FETs , MMICs, and low-noise HEMT solutions offer high performance and uncompromised reliability for radar, base stations, SATCOM, point to point, and space applications.
Current: 1 mA - 20 mA
Voltage: 2.7 V
Features Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at ...
Broadcom
Current: 150 A
Voltage: 600 V
... VCES – 600V. Switches – Half Bridge. IGBT Modules are housed in a standard industrial case making it easy to easy integrate of the device into existing equipment. The IGBT modules (Insulated Gate Bipolar ...
... Silicon Bipolar RF Transistors and GaAs FETs. The GaAs FET RF transistors are ideal for the first or second stage of base station LNA due to the excellent combination of low noise figure and enhanced ...
Voltage: 20, 50 V
N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ...
Diodes Incorporated
Current: 10, 25 A
Voltage: 1,200 V
Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate ...
Rongtech Industry (Shanghai) Inc.,
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