SMD diode modules

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Schottky diode module
Schottky diode module
NST series

Reverse voltage: 45, 100, 150, 200 V

175°C TJ operation Center tap module Low forward voltage drop Guard ring for enhanced ruggedness and long term reliability Lead (Pb)-free Designed and qualified for industrial level Applications Plating power ...

Schottky diode module
Schottky diode module
I series

Reverse voltage: 45, 100, 150, 200 V

175°C TJ operation Center tap module Low forward voltage drop Guard ring for enhanced ruggedness and long term reliability Lead (Pb)-free Designed and qualified for industrial level Applications Plating power ...

silicon carbide diode module
silicon carbide diode module
SCS210AJHR

DC voltage: 650 V
Reverse voltage: 650 V

Switching loss reduced, enabling high-speed switching . (4-pin package) AEC-Q101 qualified Low forward voltage Negligible recovery time/current Temperature independent switching behavior

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ROHM Semiconductor
Schottky diode module
Schottky diode module
RB058L150DD

DC voltage: 150 V
Reverse voltage: 150 V

RB058L150DD is the high reliability Automotive Schottky Barrier Diode, suitable for general rectification. Features: High reliability Small power mold type Super low IR

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ROHM Semiconductor
Schottky diode module
Schottky diode module
RB058L-60DD

DC voltage: 60 V
Reverse voltage: 60 V

ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for PC,mobile phone and various portable electronics. Features: ・ Small power mold type.(PMDS) ・ High reliability ・ AEC-Q101 qualified

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ROHM Semiconductor
Schottky diode module
Schottky diode module
RBR1VWM30ATF

DC voltage: 30 V
Reverse voltage: 30 V

RBR1VWM30ATF is low VF high reliability schottky barrier diode, suitable for general rectification. Features: High reliability Small power mold type Low VF

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ROHM Semiconductor
Schottky diode module
Schottky diode module
RB058L-40DD

DC voltage: 40 V
Reverse voltage: 40 V

ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for PC,mobile phone and various portable electronics. ・ Small power mold type.(PMDS) ・ High reliability ・ AEC-Q101 qualified

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ROHM Semiconductor
Schottky diode module
Schottky diode module
RB068L-40DD

DC voltage: 40 V
Reverse voltage: 40 V

ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for PC,mobile phone and various portable electronics. Features: ・Small, power mold type.(PMDS) ・Low IR type, highly reliable.

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ROHM Semiconductor
Schottky diode module
Schottky diode module
RB080L-30DD

DC voltage: 30 V
Reverse voltage: 30 V

ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for PC,mobile phone and various portable electronics. FEATURES: •Small, power mold type.(PMDS) •Low VF type, highly reliable.

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ROHM Semiconductor
Schottky diode module
Schottky diode module
RBR1VWM40ATF

DC voltage: 40 V
Reverse voltage: 40 V

RBR1VWM40ATF is low VF high reliability schottky barrier diode, suitable for general rectification. Features: High reliability Small power mold type Low VF

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ROHM Semiconductor
Schottky diode module
Schottky diode module
RBR1VWM60ATF

DC voltage: 60 V
Reverse voltage: 60 V

RBR1VWM60ATF is low VF high reliability schottky barrier diode, suitable for general rectification.

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ROHM Semiconductor
Schottky diode module
Schottky diode module
RBLQ3LAM10TF

DC voltage: 100 V
Reverse voltage: 100 V

... highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel ...

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ROHM Semiconductor
PN junction diode module
PN junction diode module
RFR30F60PN

DC voltage: 2.6 V
Reverse voltage: 600 V

DESCRIPTION RFR30F60PN is a Super-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance of forward voltage ...

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Rongtech Industry (Shanghai) Inc.,
PN junction diode module
PN junction diode module
RFR60F30APN

DC voltage: 0.9 V
Reverse voltage: 300 V

GENERAL DESCRIPTION RFR60F30APN is an Ultra-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance of ...

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Rongtech Industry (Shanghai) Inc.,
PN junction diode module
PN junction diode module
RFR30F40PN

DC voltage: 1, 1.15 V
Reverse voltage: 400 V

... temperature High frequency operation Low power loss, less RFI and EMI Low IR value High surge capacity Epitaxial chip construction

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Rongtech Industry (Shanghai) Inc.,
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