High-speed MOSFET

for automotive applicationsSiChigh-voltage resistance

Overview
Silicon Carbide (SiC) mSiC® MOSFETs enable higher switching frequencies and improved device efficiency to reduce component size, support higher blocking voltages and deliver strong avalanche capability. Designed for medium- to high-voltage power systems, mSiC® MOSFETs provide a stable body diode, long oxide lifetime and industry-leading avalanche and short-circuit performance to improve system reliability and uptime.

High-Performance Discrete SiC MOSFETs
Our mSiC® MOSFET portfolio covers voltages from 700 V to 3.3 kV and is optimized for compact, efficient power stages in demanding applications such as aerospace, e-mobility, industrial drives and renewable-energy converters.

Features

• Operation to high junction temperature (Tj = 175°C) with minimal RDS(on) shift across temperature
• Industry-leading gate oxide stability (< 100 mV Vth shift) and long gate-oxide lifetime
• Unclamped Inductive Switching (UIS) avalanche ruggedness (> 100k pulses)
• Extended short-circuit withstand time and stable body diode behavior

Benefits

• Enables higher switching frequency and improved conversion efficiency
• Higher power density allows smaller, lighter power systems
• Improved ruggedness and system reliability in harsh conditions
• Reduces need for redundant SiC devices in many designs
• Lower cooling requirements and reduced overall system cost

Our Advantage

• Multiple epi sources and dual SiC fabs to secure long-term supply
• Unmatched UIS avalanche rating and robust short-circuit performance
• Longest published gate-oxide withstand time
• Client-driven obsolescence practice to support lifecycle requirements

Demo & Evaluation Boards

• Single-channel discrete gate-driver evaluation board (example platform)
• Half-bridge evaluation board (example platform)
• Power motherboard fast evaluation tool — for conduction/switching loss measurement, double-pulse testing and converter analysis

Applications

• E-mobility and automotive powertrains (automotive-grade AEC‑Q101 variants available)
• Renewable energy power conversion and inverters
• Aerospace and other high-reliability systems
• Industrial motor drives, traction and power-supply applications

Technical specifications

• Voltage range: 700 V to 3 300 V
• Maximum junction temperature (Tj): up to 175°C supported
• Gate oxide stability: < 100 mV Vth shift over lifetime
• Oxide lifetime: > 100 years (published lifetime characteristic)
• Avalanche (UIS) ruggedness: > 100k pulses
• Stable body diode and robust short-circuit withstand capability
• Automotive-grade offerings available (AEC‑Q101 qualified variants)