Reagent

Overview We provide a comprehensive range of etchant formulations for semiconductor and microfabrication processes, including buffered oxide etchants (BOE), dilute hydrofluoric acid (HF) solutions, mixed acid etchants (MAE) and specialty metal etchants.

Summary Our product set covers multiple NH4F:HF ratios for BOE, dilute HF blends with tight assay control, MAE options and specialty etchants for selective metal removal. Formulations are available with or without surfactant and can be tailored to process requirements.

Product Lineup

• Buffered Oxide Etchants (BOE)
  • Precisely blended BOE with tight assay specifications in multiple NH4F:HF ratios.
  • Used for SiO2 film etching and surface preparation prior to diffusion and metallization.
  • Formulated from high-purity HF and NH4F feedstocks; available with or without surfactant.
• Dilute HF
  • Controlled blends of dilute hydrofluoric acid for oxide removal and process cleaning with narrow assay tolerances.
• Freckle Etch
  • Formulated for the removal of residual silicon nodules after Al–Si–Cu etch processes.
• Specialty Metal Etchants
  • Selective metal removal chemistries, including aluminum-specific etchants and immersion etchants for metallization layers; surfactant options and custom engineering available.

Applications / Typical Uses

• SiO2 film etching in semiconductor device fabrication.
• Pre-diffusion and pre-metallization surface preparation.
• Removal of silicon nodules following Al–Si–Cu etch steps.
• Selective metal layer removal in metallization processing.

Technical characteristics / Specifications

• Product types: BOE, Dilute HF, MAE, Freckle Etch, Specialty Metal Etchants.
• BOE available in multiple NH4F:HF ratios with tight assay control.
• Primary raw materials: high-purity HF and NH4F for BOE formulations.
• Options: surfactant present/absent; immersion and specialty aluminum etchants available; custom formulation support.
• Primary functions: SiO2 etching, surface preparation, selective metal removal, silicon nodule remediation after Al–Si–Cu etch.