Pulsed laser source HPF-50-IR

femtosecondultra-short pulsesolid-state

Machine Features

• Femtosecond pulse
• High pulse energy and peak power
• Near-diffraction-limited beam quality
• High stability and reliability

Applications
This laser adopts advanced chirped pulse amplification (CPA) technology to deliver near-diffraction-limited femtosecond output. It is widely applied in semiconductor and consumer electronics industries for precise micromachining and consistent process performance.

• Cutting, drilling and scribing (glass, silicon, ceramics, flexible printed circuit boards)
• Thin film patterning (metals, thin films)
• Marking (glass, silicon, ceramics, metals, plastics)

Technical Data Sheet
Operation Mode: Pulse
Average Power (W): 50 W @ 600 kHz (alternative: 20 W @ 100 kHz)
Central Wavelength (nm): 1030
Linewidth (nm): <3 (3 dB)
Repetition Frequency (kHz): 50-2000 (adjustable)
Pulse Width (fs): 600-30000 (customizable)
Maximum Single Pulse Energy (µJ): 200
Power Adjustment Range (%): 0-100
Response Time (µs): <100
Beam Quality (M2): ≤1.3
Power Stability (%): ≤2 (24 h)
Spot Size (mm): 2.5±0.3 (1/e2)
Spot Ellipticity (%): >90 (typ. 93%)
Beam Offset (mm): <1.0
Beam Divergence Angle (mrad): <0.5

Technical specifications

• Operation Mode: Pulse
• Average Power: 50 W @ 600 kHz (alternative: 20 W @ 100 kHz)
• Central Wavelength: 1030 nm
• Linewidth: <3 nm (3 dB)
• Repetition Frequency: 50-2000 kHz (adjustable)
• Pulse Width: 600-30000 fs (customizable)
• Maximum Single Pulse Energy: 200 µJ
• Power Adjustment Range: 0-100%
• Response Time: <100 µs
• Beam Quality (M2): ≤1.3
• Power Stability: ≤2% (24 h)
• Spot Size: 2.5±0.3 mm (1/e2)
• Spot Ellipticity: >90% (typ. 93%)
• Beam Offset: <1.0 mm
• Beam Divergence Angle: <0.5 mrad