Efficiency : 23.3 %
Peak Power : 5.73 Wp
Bifaciality factor* : 93 %
Dimensions (LхWхT) : 157,35 х 157,35 mm
Design type : Busbarless
Plate type : High quality N-type wafers
Effect of light-induced degradation : None
Side : 157,35 ± 0,25 mm
Angle : 90 ± 0,3°
4 chamfers : (8,5±1,0) х (45±0,3)°
Diagonal : Ø211 ± 0,5 mm
Weight : 7,8 ± 0,5 g
Thickness : 0,13 ± 0,02 mm
Temperature Coefficient, Vос : -0.262 %/°С
Temperature Coefficient, Isc : 0.034 %/°С
Temperature Coefficient, Pmax : -0.297 %/°С