Focused ion beam system NX2000

NX2000 is a FIB-SEM optimised for semiconductor applications (defect analysis with KLARF coordinate import, TEM lamella extraction, device development). With 205 x 205 mm X,Y travel, the sample stage even allows full-surface processing of 200 mm wafers without sample rotation. The vertically mounted Ga FIB allows up to 100nA ion current at 30 kV. The FE-SEM column is equipped with a cold field emitter.