High-power laser diode bar JDL-BAB-TE series

continuous wavequasi-continuous wavesolid-state

High-power laser bars for optical pumping and direct-diode-laser (DDL) applications in materials processing, medicine or sensing Jenoptik has pioneered high-power diode laser technology and continues to provide industry-leading high-power broad-area edge-emitting diode lasers emitting in the 760 nm – 1060 nm spectral region. We provide unmounted laser bars capable of operating in continuous-wave (cw), hard-pulse (hp)* long-pulse (lp)** and quasi-continuous-wave (qcw) up to 300 W (cw)/ 500 W (qcw) optical output power. * hard-pulse refers to deep cycling from I = 0 to Imax @ e.g. on-times tON = 1 s and 50% duty cycle ** long-pulse refers to operation @ on-times tON ~ 5..100 ms and > 1% duty cycle Epitaxial wafer services Epitaxy of wafers Custom design epitaxial wafers for near-infrared (NIR) optoelectronic devices Our epitaxial services address the need for Epi-wafer structures based on GaAs substrates and (Al, In, Ga) (As, P) compound semiconductors. We provide custom design epitaxial wafer structures for a variety of optoelectronic devices operating in the 630 nm – 1200 nm spectral range, for further wafer-level processing by our customers into, e.g.: Edge-emitting lasers: broad-area laser bars and single emitters Surface-emitting lasers: vertical (external) cavity surface-emitting lasers (VCSELs, VECSELs) Light-emitting diodes (LEDs): including superluminescent diodes (SLEDs) and resonant-cavity light-emitting diodes (RCLEDs) Photodetectors Strict process and quality monitoring, traceability, confidentiality and over 20 years experience in Epi-wafer growth make us your trusted foundry partner for custom design Epi-wafers.