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Annealing furnace CCBS-IR
bakingchamberinfrared

annealing furnace
annealing furnace
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Characteristics

Function
annealing, baking
Configuration
chamber
Heat source
infrared
Atmosphere
nitrogen
Other characteristics
large-size
Maximum temperature

250 °C
(482 °F)

Width

Min.: 300 mm
(11.81 in)

Max.: 3,000 mm
(118.11 in)

Height

Min.: 400 mm
(15.75 in)

Max.: 3,200 mm
(125.98 in)

Description

The CCBS-IR series are single substrate transfer type clean ovens that utilize an IR heating system. They can perform a variety of heat treatments for large-size liquid-crystal (LCD) and organic EL (OLED) up to 10th generation. A demonstration model that processes IGZO and LTPS (low temperature polysilicon) at 500°C is also available. Features High-level clean factor High heating efficiency Excellent temperature uniformity Capable of atmosphere control High-level clean factor The clean structure that does not generate dust, combined with precision oven atmosphere control (patent acquired), deliver a high level of clean performance. These ovens are also capable of processing array substrates that require a strict clean environment. High heating efficiency A far-infrared (IR) heating system with superior heating efficiency is used, and is capable of high-efficiency processing of all film thicknesses. It is ideal for processing of thick films such as alignment layers and passivation films. Excellent temperature uniformity The adopted IR panel heaters deliver excellent temperature uniformity. They are capable of uniform heating even of large-size substrates such as 10th generation. Capable of atmosphere control Nitrogen gas can be injected into the oven to perform heat treatment at low oxygen concentrations.
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.