NPN phototransistor Metal Can TO18
silicon

NPN phototransistor
NPN phototransistor
NPN phototransistor
NPN phototransistor
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Characteristics

Type
NPN
Other characteristics
silicon
Current

0.01 mA, 0.2 mA, 1.65 mA

Description

Fall time tf 8.0 µs Rise time tf 8.0 µs Spectral range of sensitivity typ. λ10% min. 450 nm λ10% max. 1100 nm Radiant sensitive area A 0.11 mm² Beam angle ∢ 110 ° Dimension l 5.35 mm w 5.35 mm h 3.3 mm Operating temperature Top min. -40 °C Top max. 80 °C Application fields Industrial Factory automation

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