Silicon wafer

Product introduction
It is difficult to control yield of large thin stacked photovoltaic silicon wafers. We have been engaged in cutting for many years, continuously promoting thin-wire processes to improve yield and wafer performance. The service focuses on reducing wire marks and TTV to achieve improved wafer appearance and delivery rates. We provide machining services for a range of formats including 182 and 210 series, rectangular wafers and half wafers. Equipment is capable of cutting and processing larger and thinner wafers to meet industry trends and customer requirements.

Product parameters
N/P Type | Wafer Size | Wafer Thickness/μm | TTV/μm | Saw Mark/μm | Resistivity | MCLT/μs | Oxygen Content/ppma | Carbon Content/ppma
P | 182.2*182.2 | 150±10 | ≤25 | ≤12.5 | 0.4-1.1 | ≥70 | ≤15 | ≤1
P | 182*183.75 | 150±10 | ≤25 | ≤12.5 | 0.4-1.1 | ≥70 | ≤15 | ≤1
N | 182.2*183.75 | 130±8 | ≤20 | ≤12.5 | 0.6-1.6 | ≥1000 | ≤11 | ≤1
N | 182.2*182.2 | 130±8 | ≤20 | ≤12.5 | 0.6-1.6 | ≥1000 | ≤11 | ≤1
N | 182.3*210 | 130±8 | ≤20 | ≤12.5 | 0.6-1.6 | ≥1000 | ≤11 | ≤1
N | 210*210 | 130±8 | ≤20 | ≤12.5 | 0.6-1.6 | ≥1000 | ≤11 | ≤1
N | 210*105 | 110+15/-10 | ≤25 | ≤12.5 | 0.3-2.1 | ≥1000 | ≤14 | ≤1
N | 182.3*105 | 130±10 | ≤25 | ≤12.5 | 0.4-1.6 | ≥4000 | ≤13 | ≤1
Note: Silicon wafers can be customized in terms of resistivity and visual parameters to meet customer requirements.

Features / Technical specifications

• Product type: Photovoltaic large silicon wafer machining and cutting services (wafer processing).
• Primary focus: reduce wire marks and Total Thickness Variation (TTV) to improve wafer appearance and yield for large thin wafers.
• Supported wafer formats and example sizes: 182.2×182.2 mm, 182×183.75 mm, 182.2×183.75 mm, 182.3×210 mm, 210×210 mm, 210×105 mm, 182.3×105 mm, rectangular wafers, half wafers and other customized sizes.
• Thickness ranges and tolerances: examples include 150±10 μm, 130±8 μm, 110+15/-10 μm, 130±10 μm (depending on type/size).
• TTV (Total Thickness Variation): typically ≤20 μm or ≤25 μm depending on N/P type and size.
• Saw mark (surface wire mark): typically ≤12.5 μm across listed types.
• Resistivity ranges (examples): 0.3–2.1 Ω·cm, 0.4–1.1 Ω·cm, 0.4–1.6 Ω·cm, 0.6–1.6 Ω·cm (depending on wafer type/size).
• MCLT (minority carrier lifetime) examples: ≥70 μs, ≥1000 μs, ≥4000 μs for specific configurations.
• Oxygen content examples: ≤15 ppma, ≤11 ppma, ≤14 ppma, ≤13 ppma (varies by type).
• Carbon content: ≤1 ppma for all listed types.
• Customization: wafers can be customized for resistivity and visual parameters to meet specific process and yield requirements.
• Service capability: machining and cutting for 182, 210, rectangular and half wafers; equipment supports larger and thinner wafer processing aligned with thin-wafer industry trends.