US Utility patent No. US7,362,196 B2 ETC
EU, China, Taiwan,Korea patented -
● Frequency range: DC to 3GHz, DC to 6GHz,DC to 12.4GHz,DC to 18GHz
● Power rating: 100mW,200mW,2W
● Impedance: 50Ω or 75Ω
● Operating temperature: -55℃ to +150℃
● Excellent acteristics of attenuation compensating: wide attenuation variable range and low VSWR of temperature from -55℃to +150℃, especially at the frequency of 1GHz, 3GHz and 6GHz.
●10 attenuations from 1dB to 10dB and 7 variation slope acteristics from N3 to N9. Besides, custom services are available for p/n with larger slopes like N10 or N11.
● Adopting 100% laser trimming, high attenuation accuracy.
● High reliability. Adopting advanced thick film technology through firing at the high temperature of 850 ℃.
● Zero Distortion, and no phase changes and time delay caused by temperature variation.
● Temperature compensation and RF isolation, which are more suitable for multi-stage power amplifiers.
● No extra IP3 exists and suitable for linear power amplifier.
● Low cost and small size. It can be easily designed in RFpower amplifier to replace AGC loop circuit, which is easy for the regeneration of RF circuit
●SMA and N type available. The connectorized attenuator is easy for connection and good for improvement of system temperature acteristics.
● Power Amplifier
● Low Noise Amplifier
● Gain Blocks
● Optical Transceiver Module
● MMIC Amplifiers
● WLAN (2.4GHz or 5.8GHz)
● WiMAX
● UWB
● Mixers
● Power Dividers
● Satellite Communication
● Directional Couplers
● Broadcast (TV & Radio)
● Radar
● Substrate: Alumina (Al2O3)
● Resistive material: Thick film
● Terminal material: