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Part: IRF1302
Description: 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
A IRF1302 with Standard Packaging
Similar to IRF1302 with Lead Free Packaging
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ST's proprietary strip layout technique and its derivatives have revolutionized Power MOSFETs. The Power MOSFET range includes the very advanced MDmesh%u2122 plus PowerMESH%u2122 products for high and very high voltage Power MOSFET applications.
The low voltage STripFET%u2122 family is optimized for DC-DC conversion, automotive, motion control and power management applications.
Power MOSFET performance is further boosted through innovative packaging concepts.
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TSM3900D: 20 V Dual N-Channel Mosfet
Features:
- Advance Trench Process Technology
- High Density Cell Design for Ultra Low On-resistance
Application:
- Load Switch
- PA Switch
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Toshiba continues to offer the broadest line up of discrete products. Toshiba's Discrete solutions cover a breadth of products including Optoelectronics, Logic ICs, Small Signal, Microwave, Radio Frequency (RF) ICs, and Power devices.
Toshiba Power Semiconductors, RF, and Small Signal low frequency discrete devices consists of a wide array of Diodes, Linear ICs, Semi Custom ICs, Sensors, Thyristers, Triacs, and Transistors. Toshiba's Discrete products are designed for applications that require high reliability, power efficiency and a compact design.
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Toshiba Power Semiconductors, RF, and Small Signal low frequency discrete devices consists of a wide array of Diodes, Linear ICs, Semi Custom ICs, Sensors, Thyristers, Triacs, and Transistors. Toshiba's Discrete products are designed for applications that require high reliability, power efficiency and a compact design.
Toshiba offers a wide range of power MOSFET, power transistor modules with or without insulatead heat sink covers up to high power.
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR MMPQ2222A, consisting of four transistors and available in the SOIC-16 surface mount package, is designed for general purpose amplifier and switching applications.
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DC-6 GHz Broadband MOSFET Quad Array
Extend the reach of your base stations with Peregrine integrated receive mixers. High linearity and remarkable input IP3 performance will pick distant signals out of the haze. Integrated matching RF and LO networks and the tiny 6-lead DFN package eliminate the need for bulky mixer modules or external RF baluns.
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Offering a broad portfolio of RF Power products, Freescale Semiconductor serves numerous RF markets including wireless infrastructure, broadcast and industrial, scientific and medical markets. Freescale's leading RF Power product offerings meet the increasing demands of ISM, microwave and personal communication systems, including cellular infrastructure, broadband data, WiMAX, TV broadcast, UHF/VHF broadcast and land mobile. With a long history of experience and innovation, Freescale delivers the quality, reliability and consistency that our customers depend on.
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*Amp.:1A~16A;Voltage:20V~100V;Package:SMA,SMB,SMC,SOD123,D2Pack,Mini-Melf,SOD-523,SOD-723,SOT-523,SOT-323,SOT-23,SC-59
*Amp.:1A~60A;Voltage:20V~200V;Package:R-1,DO-41,DO-15,DO-27,TO-220, ITO-220, TO-3P
-Eris employs strict quality control and various reliability tests by our precision equipments allowing us to provide the high quality products to our customers.
-If you need more information or need favorable quotation, please contact with Ms. Cindy Lin directly (cindy.lin@eris.com.tw)
Best Regards,
Eris Technology Corporation
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Silicon Carbide Schottky Diodes - NEW 3G now available!
Silicon Carbide (SiC) is a revolutionary material for power semiconductors, its physical properties outperform Si- and GaN power devices by far.
Features
* Benchmark switching behavior
* No reverse recovery
* No temperature influence on the switching behavior
* Standard operating temperature -55° to 175°C
SiC power devices enable increased efficiency, reduced solution size, higher switching frequency and produce significant less electromagnetic interference (EMI) ina variety of target applications:
* Power factor correction
* Solar and UPS inverters
* Motor drives
* Output rectification
Infineon offers SiC Schottky diodes in 300V, 600V and 1200V.
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10.0 A Surface Mount Schottky Barrier Rectifiers
Features:
- Plastic material used carries Underwriters Laboratory Classifications 94V-0
- Metal silicon junction, majority carrier conduction
- Low power loss, high efficiency
- High current capability, low forward voltage drop
- High surge capability
- For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
- Guarding for overvoltage protection
- High temperature soldering guaranteed
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STMicroelectronics offers a wide product portfolio of small signal industry standard devices in the well-known TO-18 and TO-39 metal can packages and high voltage small signal transistors in plastic packages for use in a broad range of applications/market segments.
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The Multipulse™ SIDAC is a voltage switch used in Metal-Halide lamp ignition circuits as well as High Pressure Sodium lamp ignition circuits for outdoor street and area lighting. This robust solid state switch is designed to handle lamp igniter applications requiring operation at ambient temperatures up to 90°C where igniter circuit components can raise SIDAC junction temperature up to 125°C, especially when the lamp element is removed or ruptured. Its excellent commutation time (tCOMM) makes this robust product best suited for producing multiple pulses in each half cycle of 50/60 Hz line voltage. The Multipulse™ SIDAC is offered in DO-15 axial leaded package.
Kxxx1G SIDAC has a repetitive off-state blocking voltage (VDRM) of 180V to 200V minimum depending actual device type. Blocking capability is ensured by glass passivated junctions for best reliability. Package is epoxy encapsulation with Tin-plated copper alloy leads.
Features:
AC circuit oriented
Triggering Voltage of 200 to 280V
RoHS Compliant
Read More
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Renesas offers a wealth of triac and thyristor devices including products for low-rush current, high-voltage and high-capacity. Key applications are household appliances, LBP, PPC and FAX machines, strobes and igniters. Renesas's triacs are the world’s first commercially available triacs with Junction Temperature rating at 150-degree C.
To see full lineup of Renesas Thyristors and Triacs, visit the URL below.
http://eu.renesas.com/fmwk.jsp?cnt=thyristors_triacs_root.jsp&fp=/products/discrete/thyristors_and_triacs/
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Central manufactures Thyristors in a wide range of leaded and SMD packages. New devices are continuously in development, so be sure to view the On The Drawing Board section listed below.
Coupled with proven reliability and nothing less than total customer satisfaction, Central's Thyristors will provide answers to some of industries most demanding requirements.
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The wide portfolio consists of standard thyristors and diodes with epoxy disc case, high power thyristors and diodes with ceramic disc case. Bipolar Power Semiconductors are applied in the most varied fields of application in a power range of just a few kilowatts up to several gig watts. The light triggerable thyristors (LTT´s) are very compact in size and especially fast in reaction. Hence without high power thyristors high voltage DC couplers would not be reality today, when two grids can not be coupled by AC links.
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From low saturation voltage IGBT, high gain and low noise/distortion small signal Bip-TRSs to MOSFET for small signal switching, Renesas offers high performance, low profile and small footprint transistors for diversified applications.
For more details on Renesas Transistors, visit hte URL below.
http://eu.renesas.com/fmwk.jsp?cnt=transistor_family_landing.jsp&fp=/products/discrete/transistors/
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications.
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NPN Silicon Digital Transistors
• Switching circuit, inverter circuit,driver circuit
• Built in bias resistor (R1= 1 kΩ, R2= 10 kΩ)
• BCR523U: Two (galvanic) internal isolated transistors with good matching in one package
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
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This new family of devices combines multiple different discrete devices in the same surface mount case. The first series of these are packages in the newest smallest PICOmini™ SOT-563 case. By incorporating multiple devices in a single package, these devices assist the design engineer in meeting their strictest requirements for smaller discrete components and overall product size reduction.
Coupled with proven reliability and nothing less than total customer satisfaction, this family of components will provide answers to some of industries most demanding requirements.
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Application Explanation:
- Switching mode power supply, light dimmer, electric flasher unit, hair drier
- TV sets, stereo, refrigerator, washing machine
- Electric blanket, solenoid driver, small motor control
- Photo copier, electric tool
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ON Semiconductor offers programmable unijunction transistors (PUTs), SIDACs, silicon controlled rectifiers (SCRs), thyristor surge protection devices (TSPDs), and triacs.
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*Watt: 400W, 500W, 600W, 1500W, 3000W, 5000W; Package: DO-41,DO-15,DO-27,R-6.
*Watt: 200W, 400W, 600W, 1500W, 3000W, 5000W; Package:SOD-123, SMA, SMB, SMC
-Eris employs strict quality control and various reliability tests by our precision equipments allowing us to provide the high quality products to our customers.
-If you need favorable quotation of TVS diode or more information, please contact with Ms. Cindy Lin through her email address: cindy.lin@eris.com.tw
Looking forward to giving you support someday soon!
Best Regards,
Eris Technology Corporation
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600 Watts Transient Voltage Suppressor Diodes
Features
- Plastic package has Underwriters Laboratory Flammability Classification 94V-0
- Exceeds environmental standards of MIL-STD-19500
- 600W surge capability at 10 x 1000 us waveform
- Excellent clamping capability
- Low Dynamic impedance
- Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional
- High temperature soldering guaranteed: 260oC / 10 seconds / .375”,(9.5mm) lead length / 5lbs.,(2.3kg) tension
Mechanical Data
- Case: Molded plastic
- Lead: Axial leads, solderable per MIL-STD-202, Method 208
- Polarity: Color band denotes cathode except bipolar
- Weight: 0.34gram
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*Watt:500m, 1W, 3W, 5W; Package: DO-35,DO-41,DO-15, DO-27
*Watt:100m, 200m, 410m, 500m, 1W, 5W;Package:SOD-523, SOD-323, SOT-323, SOD-123, SOT-23,Mini Melf, SMA, SMB,SMC
-Eris employs strict quality control and various reliability tests by our precision equipments allowing us to provide the high quality products to our customers.
-If you need favorable quotation of Zener diode or more information, please contact with Ms. Cindy Lin through her email address: cindy.lin@eris.com.tw
Looking forward to give you support someday soon!
Best Regards,
Eris Technology Corporation
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Transistors, Diodes, Thyristors
