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Switching diodes
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Reverse voltage: 650 V
Shorter recovery time, enabling high-speed switching. FEATURES: Reduced temperature dependence High-speed switching possible High surge current capability
ROHM Semiconductor

Reverse voltage: 650 V
Shorter recovery time, enabling high-speed switching. FEATURES: Reduced temperature dependence High-speed switching possible High surge current capability
ROHM Semiconductor

Reverse voltage: 650 V
Shorter recovery time, enabling high-speed switching. FEATURES: Reduced temperature dependence High-speed switching possible High surge current capability
ROHM Semiconductor

Reverse voltage: 650 V
1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 79A (Max) (3) The junction capacitance ...

Reverse voltage: 70 V
The CENTRAL SEMICONDUCTOR CMDD6263 is a High Voltage, low VF, silicon Schottky diode in a surface mount package, designed for fast switching applications requiring low forward voltage drop. FEATURES: • ...
Central Semiconductor

Reverse voltage: 600 V
Description Qspeed™ diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Product Highlights Features Now available in ...
Power Integrations

DC voltage: 1 V - 2.5 V
Reverse voltage: 75 V - 100 V
Switching diodes provide the same functionality as an electrical or mechanical switch. They are a single p-n diode in a discrete package. When selecting Switching Diodes ...

Features The MiniPak HMPS-282x family of Schottky diodes is the most consistent and best all-round device available, and finds applications in mixing, detecting, switching, sampling, clamping and wave ...
Broadcom

Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automated Insertion • Lead, Halogen and Antimony ...
Diodes Incorporated

DC voltage: 11 V - 22 V
Reverse voltage: 20 kV - 90 kV
※Features: High speed switching characteristics,TRR 50-150ns. Low leakage,resistant to surge ,resistant to shock. Great avalanche voltage breakdown protection features. High heat resistance,PN junction ...
Anshan Suly Electronics Co., Ltd.
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