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Current: -16.4 A
Voltage: -60 V
... P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. ...
Infineon Technologies AG
Current: 100 mA
Voltage: 60, 50 V
Typical Applications Digital controls Switching, Signal processing Commercial / industrial grade Suffix -Q: AEC-Q101 compliantl) Suffix -AQ: in AEC-Q101 qualification x) Features Cost and space savings by integrated bias ...
Diotec
Current: 20 A - 300 A
Voltage: 1,200, 650 V
... Applications Switching frequency 80...100 kHz Frequency inverters AC and DC motor drives Commercial / industrial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Features Trench Gate & ...
Diotec
Current: 0.12, 0.28, 0.2 mA
Voltage: 60 V
... converter, Drivers Commercial grade Suffix -Q: AEC-Q101 compliant*) Suffix -AQ: in AEC-Q101 qualification *) Features Fast switching times Compliant to RoHS, REACH, Conflict Minerals L)
Diotec
Current: 800 A
Voltage: 1,200 V
The NXH800H120L7QDSG is a rated half bridge IGBT power module. The integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve ...
Fairchild Semiconductor
Current: 95 A
Voltage: 40 V
RH6G040BG is a power MOSFET with low-on resistance and High power package, suitable for switching. Low on - resistance High Power small mold Package(HSMT8) Pb-free plating ; RoHS compliant Halogen Free
ROHM Semiconductor
Current: 150 A - 3,600 A
Voltage: 1,200, 1,700, 3,300, 4,500, 6,500 V
Hitachi Energy's IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules. The high-power HiPak IGBT modules feature low ...
Current: 8 A
Voltage: 600 V
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Lower on voltage drop (VCE(sat)) Very ...
STMicroelectronics
Voltage: 50, 60, 7 V
The Central Semiconductor CMKT3920 (two single NPN transistors) is a dual combination in a space saving SOT-363 ULTRAmini™ package, designed for small signal general purpose amplifier and switching applications. MARKING ...
Current: 5, 20, 30, 50 A
Voltage: 600 V
The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced ...
Current: 0.8 A
Voltage: 50 V
DC Current Gain hFE Max.:400 DC Current Gain hFE Min.:160 Description:TO-92, 50V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO (V):50 VCE ...
Voltage: 20, 50 V
N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface ...
Diodes Incorporated
Features: • - Field Stop Trench Gate IGBT • - Short Circuit Rated>10ps - - Low Saturation Voltage • - Low Switching Loss - 100% RBSOA Tested (2*lc) • - Low Stray Inductance • - Lead Free, ...
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