{{product.productLabel}} {{product.model}}
{{#if product.featureValues}}{{product.productPrice.formattedPrice}} {{#if product.productPrice.priceType === "PRICE_RANGE" }} - {{product.productPrice.formattedPriceMax}} {{/if}}
{{#each product.specData:i}}
{{name}}: {{value}}
{{#i!=(product.specData.length-1)}}
{{/end}}
{{/each}}
{{{product.idpText}}}
{{product.productLabel}} {{product.model}}
{{#if product.featureValues}}{{product.productPrice.formattedPrice}} {{#if product.productPrice.priceType === "PRICE_RANGE" }} - {{product.productPrice.formattedPriceMax}} {{/if}}
{{#each product.specData:i}}
{{name}}: {{value}}
{{#i!=(product.specData.length-1)}}
{{/end}}
{{/each}}
{{{product.idpText}}}
Voltage: -60 V
... P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. ...
Infineon Technologies AG
Voltage: 12, 50 V
Current: 0.1 A
This group of transistors are hybrid transistor with other device as combination listed below in ultra-small package type, small power type and so on, for the benefit of space saving and components reduction. ...
Voltage: 600, 650 V
Current: 4 A - 80 A
ROHM's products are realized low Vce(sat) and Low switching loss by ROHM's trench gate and thin wafer technology.
... Vce(sat) and high avalanche energy. Features: Low Collector-Emitter Saturation Voltage High Self-Clamped Inductive Switching Energy Built in Gate-Emitter Protection Diode Built in Gate-Emitter Resistance Qualified ...
Voltage: 600 V
Current: 8 A
New short circuit rugged "K" series This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Lower on voltage ...
STMicroelectronics
Voltage: 600 V
Current: 8 A
New short circuit rugged "K" series This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Lower on voltage ...
STMicroelectronics
Voltage: 600 V
Current: 8 A
New short circuit rugged "K" series This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Lower on voltage ...
STMicroelectronics
Features: • - Field Stop Trench Gate IGBT • - Short Circuit Rated>10ps - - Low Saturation Voltage • - Low Switching Loss - 100% RBSOA Tested (2*lc) • - Low Stray Inductance • - Lead Free, ...
Rongtech Industry (Shanghai) Inc.,
Features: • - Field Stop Trench Gâte IGBT • - Short Circuit Rated> 1Ops • - Low Saturation Voltage • - Low Switching Loss • - 100% RBSOA Tested (2*lc) • - Low Stray Inductance • - Lead Free, Compliant ...
Rongtech Industry (Shanghai) Inc.,
Features: • - Short Circuit Rated> 10ps • - Low Saturation Voltage: Vce(sat) = 1 -85V @ le = 600A , Tc=25‘C • - Low Switching Loss • - 100% RBSOA Tested - (2*lc) • - Low Stray Inductance • - Lead Free, Compilant ...
Rongtech Industry (Shanghai) Inc.,
Voltage: 0 V - 400 V
Current: 0 A - 8 A
Fairchild created a transistor that is used for many purposes. It has a switch requiring collector currents that reaches up to 500 mA. It can be used as active component for switches and amplifiers that's in demand in ...
Voltage: 50 V
The Central Semiconductor CMKT3920 (two single NPN transistors) is a dual combination in a space saving SOT-363 ULTRAmini™ package, designed for small signal general purpose amplifier and switching ...
Voltage: 50 V
Current: 0.8 A
DC Current Gain hFE Max.:400 DC Current Gain hFE Min.:160 Description:TO-92, 50V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO (V):50 VCE ...
Voltage: 20, 50 V
N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface ...
Diodes Incorporated
Please specify:
Help us improve:
remaining