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Voltage: 12, 50 V
Current: 0.1 A
This group of transistors are hybrid transistor with other device as combination listed below in ultra-small package type, small power type and so on, for the benefit of space saving and components reduction. ...
Voltage: 600, 650 V
Current: 4 A - 80 A
ROHM's products are realized low Vce(sat) and Low switching loss by ROHM's trench gate and thin wafer technology.
... Vce(sat) and high avalanche energy. Features: Low Collector-Emitter Saturation Voltage High Self-Clamped Inductive Switching Energy Built in Gate-Emitter Protection Diode Built in Gate-Emitter Resistance Qualified ...
... P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. ...
Infineon Technologies - Sensors
Voltage: 0 V - 400 V
Current: 0 A - 8 A
Fairchild created a transistor that is used for many purposes. It has a switch requiring collector currents that reaches up to 500 mA. It can be used as active component for switches and amplifiers that's in demand in ...
Voltage: 50 V
... The Central Semiconductor CMKT3920 (two single NPN transistors) is a dual combination in a space saving SOT-363 ULTRAmini™ package, designed for small signal general purpose amplifier and switching ...
Voltage: 20, 50 V
N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface ...
Diodes Incorporated
Voltage: 1,200 V
Current: 600 A
... Applications: Rongtech’s IGBTs offer lower losses and higher energy for application such as motor drive .inverter and other soft switching applications.
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