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IGBT transistor STGB8NC60KDT4switching
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Characteristics
- Type
- IGBT
- Technology
- switching
- Current
8 A
- Voltage
600 V
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
All features
Lower on voltage drop (VCE(sat))
Very soft ultra fast recovery antiparallel diode
Lower CRES / CIES ratio (no cross-conduction susceptibility)
Short circuit withstand time 10µs
Catalogs
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