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IGBT transistor STGB8NC60KDT4switching
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Characteristics
- Type
- IGBT
- Technology
- switching
- Current
8 A
- Voltage
600 V
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
All features
Lower on voltage drop (VCE(sat))
Very soft ultra fast recovery antiparallel diode
Lower CRES / CIES ratio (no cross-conduction susceptibility)
Short circuit withstand time 10µs
Catalogs
No catalogs are available for this product.
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.
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