IGBT transistor STGD8NC60KD
switching

IGBT transistor
IGBT transistor
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Characteristics

Type
IGBT
Technology
switching
Current

8 A

Voltage

600 V

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Lower on voltage drop (VCE(sat)) Very soft ultra fast recovery antiparallel diode Lower CRES / CIES ratio (no cross-conduction susceptibility) Short circuit withstand time 10µs
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