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NPN transistor HD1750FXpowersilicon
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Characteristics
- Type
- NPN
- Technology
- power
- Other characteristics
- silicon
- Current
24 A
- Voltage
1,700 V
Description
The device uses a Diffused Collector in Planar technology adopting ”Enhanced High Voltage Structure” (EHVS1) developed to fit High-Definition CRT displays.
The new HD product series show improved silicon efficiency bringing updated performance to Horizontal Deflection stage.
All features
STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1
LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION
WIDER RANGE OF OPTIMUM DRIVE CONDITIONS
FULLY INSULATED POWER PACKAGE WHICH IS U.L COMPLIANT
Catalogs
HD1750FX
8 Pages
Exhibitions
Meet this supplier at the following exhibition(s):
Other STMicroelectronics products
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.
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