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IGBT transistor STGW30NC60KDswitching
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Characteristics
- Type
- IGBT
- Technology
- switching
- Current
30 A
- Voltage
600 V
Description
This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
All features
Low on-voltage drop (VCE(sat))
Short circuit withstand time 10 μs
Low Cres / Cies ratio (no cross conduction susceptibility)
IGBT co-packaged with ultra fast free-wheeling diode
Catalogs
STGW30NC60KD
14 Pages
Exhibitions
Meet this supplier at the following exhibition(s):
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.