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Voltage: 1,700, 2,500, 4,500 V
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching ...
Current: 600 A
Voltage: 1,200 V
Littelfuse IGBT modules offer high efficiency and fast switching speeds of modern IGBT technology in a robust and flexible format. Used for power control applications, Littelfuse offers an expanded portfolio ...
Current: 28 A
Voltage: 650 V
Hard-switching TRENCHSTOP™ 5 S5 IGBT in a small footprint TO-220 package addresses applications switching between 10 kHz and 40 kHz to deliver high current density, high efficiency, faster time-to-market cycles, circuit ...
Infineon Technologies AG
QC962-8A is a hybrid integrated IGBT driver designed for driving N-channel IGBT modules in any gate amplifier application. The device provides the required electrical isolation between input and output ...
QP12W05S-37 is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated ...
Current: 25 mA
Voltage: 13 V
FEATURES - Built-in isolated DC-DC power supply; Single power supply drive topology - High isolation voltage of 3750VAC - Input signal frequency up to 20kHz - Built-in fault circuit with a pin for fault feedback - Drive signal ignored ...
Current: 800 A
Voltage: 1,200 V
The NXH800H120L7QDSG is a rated half bridge IGBT power module. The integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve ...
Fairchild Semiconductor
Current: 50 A
Voltage: 650 V
The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such ...
ROHM Semiconductor
Current: 8 A
Voltage: 600 V
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Lower on voltage drop (VCE(sat)) Very soft ultra fast recovery ...
STMicroelectronics
Current: 150 A - 3,600 A
Voltage: 1,200, 1,700, 3,300, 4,500, 6,500 V
Hitachi Energy's IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules. The high-power HiPak IGBT modules feature low ...
Current: 3,000, 1,300, 2,000 A
Voltage: 4,500, 5,200 V
... a family of high power insulated gate bipolar transistor (IGBT) press-packs and diodes in an advanced modular housing that guarantees uniform chip pressure in multiple-device stacks. Although the most ...
... designs HousingMiniSKiiP II 1 (42x40x16) (LLxBBxHH)42x40x16 SwitchesSeven Pack VCES in V600 ICnom in A6 TechnologyNPT IGBT (Ultrafast)
SEMIKRON
Current: 5, 20, 30, 50 A
Voltage: 600 V
The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced ...
Current: 150 A
Voltage: 600 V
... VCES – 600V. Switches – Half Bridge. IGBT Modules are housed in a standard industrial case making it easy to easy integrate of the device into existing equipment. The IGBT modules (Insulated Gate Bipolar ...
Current: 10 A - 1,600 A
Voltage: 600 V - 1,700 V
Greegoo offers IGBT (insulated-gate bipolar transistor) modules in different topologies, current and voltage ratings. Starting from 15A to 1600A in voltage classes from 600V to 1700V, the IGBT ...
Current: 10, 25 A
Voltage: 1,200 V
Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate ...
Rongtech Industry (Shanghai) Inc.,
Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged eXtreme-light Punch Through (XPT™) design results in: - short circuit rated for 10µs. - very low gate charge - low EMI - ...
IXYS
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