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Voltage: 1,700, 2,500, 4,500 V
... Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks ...
Current: 600 A
Voltage: 1,200 V
... Littelfuse IGBT modules offer high efficiency and fast switching speeds of modern IGBT technology in a robust and flexible format. Used for power control applications, Littelfuse offers an expanded portfolio of IGBT ...
Current: 28 A
Voltage: 650 V
... Hard-switching TRENCHSTOP™ 5 S5 IGBT in a small footprint TO-220 package addresses applications switching between 10 kHz and 40 kHz to deliver high current density, high efficiency, faster time-to-market cycles, circuit design complexity ...
Infineon Technologies AG
Current: 150 A - 3,600 A
Voltage: 1,200, 1,700, 3,300, 4,500, 6,500 V
... Hitachi Energy's IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules. The high-power HiPak IGBT modules feature low losses combined ...
Current: 800 A
Voltage: 1,200 V
... The NXH800H120L7QDSG is a rated half bridge IGBT power module. The integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency ...
Onsemi
Current: 8 A
Voltage: 600 V
... This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Lower on voltage drop (VCE(sat)) Very soft ultra fast recovery antiparallel ...
STMicroelectronics
Current: 50 A
Voltage: 650 V
... The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board ...
ROHM Semiconductor
... designs HousingMiniSKiiP II 1 (42x40x16) (LLxBBxHH)42x40x16 SwitchesSeven Pack VCES in V600 ICnom in A6 TechnologyNPT IGBT (Ultrafast) ...
SEMIKRON
Current: 5, 20, 30, 50 A
Voltage: 600 V
... The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop ...
... By customizing the arrangement of socket pins, it can also be used for evaluation of power semiconductors such as IPM and IGBT. Possible for Kelvin measurement Able to select the wiring specifications Support the High Temperature ...
JC CHERRY INC.
Current: 100 mA
Voltage: 45, 30, 65 mV
... Typical Applications Signal processing Switching Amplification Commercial / industrial grade Suffix -Q: AEC-Q101 compliant *) Suffix -AQ: in AEC-Q101 qualification *) Features General Purpose Three current gain groups Compliant to RoHS (w/o exemp.), REACH, ...
Diotec
Current: 150 A
Voltage: 600 V
... VCES – 600V. Switches – Half Bridge. IGBT Modules are housed in a standard industrial case making it easy to easy integrate of the device into existing equipment. The IGBT modules (Insulated Gate Bipolar Transistor) ...
Current: 10, 25 A
Voltage: 1,200 V
... Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate using DBC ...
Rongtech Industry (Shanghai) Inc.,
... Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged eXtreme-light Punch Through (XPT™) design results in: - short circuit rated for 10µs. - very low gate charge - low EMI - square Reverse ...
IXYS
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