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... the combination of optimized silicon chips and incorporates with 3 main inverter blocks: power stage (short-circuit rugged IGBTs and freewheeling diodes),driving network (discrete gate resistors,high-voltage gate drivers ...
STMicroelectronics
QC962-8A is a hybrid integrated IGBT driver designed for driving N-channel IGBT modules in any gate amplifier application. The device provides the required electrical isolation between input and output ...
QP12W05S-37 is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated ...
Current: 25 mA
Voltage: 13 V
FEATURES - Built-in isolated DC-DC power supply; Single power supply drive topology - High isolation voltage of 3750VAC - Input signal frequency up to 20kHz - Built-in fault circuit with a pin for fault feedback - Drive signal ignored ...
Current: 3,000, 1,300, 2,000 A
Voltage: 4,500, 5,200 V
... a family of high power insulated gate bipolar transistor (IGBT) press-packs and diodes in an advanced modular housing that guarantees uniform chip pressure in multiple-device stacks. Although the most ...
Current: 50 A
Voltage: 650 V
The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such ...
Current: 40 A
Voltage: 1,200 V
RGS80TSX2DHR is a highly reliable IGBT for the general inverter for automotive and industrial. Low Collector - Emitter Saturation Voltage Short Circuit Withstand Time 10μs Qualified to AEC-Q101 Built in Very ...
Current: 30 A
Voltage: 400 V
RGPR30BM40 is a Ignition IGBT with low collector - emitter saturation voltage, suitable for Ignition Coil Driver Circuits, Solenoid Driver Circuits. It is a highly reliable product for automotive. Low Collector - Emitter ...
Current: 38 A
Voltage: 650 V
The 650 V, 28 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a small footprint TO-220 package addresses applications switching between 10 kHz and 40 kHz to deliver high current density, high efficiency, faster time-to-market ...
Infineon Technologies AG
Current: 10, 43 A
Voltage: 250, 500 V
FAIRCHILD presents their newest line of automotive ignition with IGBT. It is specially designed to have the highest clamp energy density of all devices on the market and low saturation voltage. Provides optimum performance ...
Fairchild Semiconductor
Renesas insulated-gate bipolar transistors (IGBTs) realize both low saturation voltage and fast switching through thin wafer technology. Product series suitable for a variety of applications are available, ...
Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged eXtreme-light Punch Through (XPT™) design results in: - short circuit rated for 10µs. - very low gate charge - low EMI - ...
IXYS
... designs HousingMiniSKiiP II 1 (42x40x16) (LLxBBxHH)42x40x16 SwitchesSeven Pack VCES in V600 ICnom in A6 TechnologyNPT IGBT (Ultrafast)
SEMIKRON
Current: 10 A - 1,600 A
Voltage: 600 V - 1,700 V
Greegoo offers IGBT (insulated-gate bipolar transistor) modules in different topologies, current and voltage ratings. Starting from 15A to 1600A in voltage classes from 600V to 1700V, the IGBT ...
Current: 10, 25 A
Voltage: 1,200 V
Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate ...
Rongtech Industry (Shanghai) Inc.,
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