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QC962-8A is a hybrid integrated IGBT driver designed for driving N-channel IGBT modules in any gate amplifier application. The device provides the required electrical isolation between input and output ...
QP12W05S-37 is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated ...
Voltage: 13 V
Current: 25 mA
FEATURES - Built-in isolated DC-DC power supply; Single power supply drive topology - High isolation voltage of 3750VAC - Input signal frequency up to 20kHz - Built-in fault circuit with a pin for fault feedback - Drive signal ignored ...
Voltage: 650 V
Current: 38 A
The 650 V, 28 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a small footprint TO-220 package addresses applications switching between 10 kHz and 40 kHz to deliver high current density, high efficiency, faster time-to-market ...
Infineon Technologies - Sensors
Voltage: 4,500, 5,200 V
Current: 3,000, 1,300, 2,000 A
... a family of high power insulated gate bipolar transistor (IGBT) press-packs and diodes in an advanced modular housing that guarantees uniform chip pressure in multiple-device stacks. Although the most ...
Voltage: 600, 650 V
Current: 4 A - 80 A
ROHM's products are realized low Vce(sat) and Low switching loss by ROHM's trench gate and thin wafer technology.
ROHM's ignition IGBTs for Automotive are High reliability product which achieved both low Vce(sat) and high avalanche energy. Features: Low Collector-Emitter Saturation Voltage High Self-Clamped Inductive Switching ...
Voltage: 1,700, 2,500, 4,500 V
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching ...
Voltage: 1,200 V
Current: 600 A
Littelfuse IGBT modules offer high efficiency and fast switching speeds of modern IGBT technology in a robust and flexible format. Used for power control applications, Littelfuse offers an expanded portfolio ...
Voltage: 600 V
Current: 8 A
New short circuit rugged "K" series This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Lower on voltage drop (VCE(sat)) Very ...
STMicroelectronics
Renesas insulated-gate bipolar transistors (IGBTs) realize both low saturation voltage and fast switching through thin wafer technology. Product series suitable for a variety of applications are available, ...
... for new designs HousingSEMITOP 3 (55x31x12) (LLxBBxHH)55x31x12 SwitchesSix Pack VCES in V600 ICnom in A6 TechnologyNPT IGBT (Ultrafast)
SEMIKRON
Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged eXtreme-light Punch Through (XPT™) design results in: - short circuit rated for 10µs. - very low gate charge - low EMI - ...
IXYS
Voltage: 250, 500 V
Current: 10, 43 A
FAIRCHILD presents their newest line of automotive ignition with IGBT. It is specially designed to have the highest clamp energy density of all devices on the market and low saturation voltage. Provides optimum performance ...
Fairchild Semiconductor
Voltage: 1,200 V
Current: 10, 25 A
Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate ...
Rongtech Industry (Shanghai) Inc.,
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