IGBT transistor IKP28N65ES5

IGBT transistor
IGBT transistor
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power, switching

28 A


650 V


Hard-switching TRENCHSTOP™ 5 S5 IGBT in a small footprint TO-220 package addresses applications switching between 10 kHz and 40 kHz to deliver high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. Summary of Features Very low VCEsat of 1.5 V at 25°C 4 times Ic pulse current (100°C Tc) Soft current fall characteristics with no tail current Symmetrical, low voltage overshoot Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping Maximum junction temperature Tvj = 175°C Qualified according to JEDEC standards Benefits Highest power density in TO-220 footprint VCEpeak clamping circuits not required No need for gate clamping components Good EMI behaviour Excellent for paralleling Applications EV charging Photovoltaic Uninterruptible Power Supplies (UPS)


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