IGBT transistor XPT™ series

IGBT transistor
IGBT transistor
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1,700 V, 2,500 V, 4,500 V


Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages Applications: Pulser circuits Laser and X-ray generators High-voltage power supplies High-voltage test equipment Capacitor discharge circuits AC switches


Meet this supplier at the following exhibition(s):

Intersolar 2024
Intersolar 2024

18-21 Jun 2024 Munich (Germany) Hall Vide - Stand B4.157

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    *Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.