IGBT transistor XPT™ series

power

The highest-performing solid state switches exhibit low thermal resistance, low tail current, low energy loss, and high-speed switching capabilities. Littelfuse’s eXtreme light punch through (XPT) IGBTs deliver on all counts. Configured as either planar or trench IGBTs, these high-voltage insulated-gate bipolar transistors can be used in parallel. Doing this yields cost savings and simplifies gate drive circuit design. Installing fast-recovery diodes with our XPT IGBTs ensures smoother switching and significantly reduces electromagnetic interference. Features Available with continuous voltage (VCES) ratings from 600 V to 4.5 kV Available with typical current ratings from 9 A to 94 A Saturation voltages generally below 4 V Low case-to-junction resistance (e.g., 92 mK/W, 4.4 K/W) Benefits Positive temperature coefficient for on-state voltage facilitates paralleling Low gate current requirements Available packaged with fast recovery diodes International standard packages