Voltage: 30 V
Current: 0 A - 44 A
HS8K11 is standard MOSFET for switching application. Features · Low on-resistance. · Pb-free lead plating; RoHS compliant. · Halogen Free. Specifications Package Code: HSML3030L10 Number of terminal:10 Polarity: Nch+Nch ...
Voltage: 0 V - 120 V
Current: 0 A - 5 A
Available in the variety of packages having the nature such as small-signal, thin and high-power to cover the market extensively.
Voltage: 12, 50, 60 V
Current: 0.1, 0.5, 1 A
Digital transistors are invented by Rohm first in the market, which is the transistor combining built-in resistor(s) for convenience of digital circuit. This product segment is becoming further extensive ...
QC962-8A is a hybrid integrated IGBT driver designed for driving N-channel IGBT modules in any gate amplifier application. The device provides the required electrical isolation between input and output ...
QP12W05S-37 is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated ...
Voltage: 13 V
Current: 25 mA
FEATURES - Built-in isolated DC-DC power supply; Single power supply drive topology - High isolation voltage of 3750VAC - Input signal frequency up to 20kHz - Built-in fault circuit with a pin for fault feedback - Drive signal ignored ...
P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications Description: OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, ...
Voltage: 4,500, 5,200 V
Current: 3,000, 1,300, 2,000 A
StakPak is a family of high power insulated gate bipolar transistor (IGBT) press-packs and diodes in an advanced modular housing that guarantees uniform chip pressure in multiple-device stacks. Although the most common ...
Voltage: 20 V
Current: 100, 82 A
Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices.
Voltage: 1,700, 2,500, 4,500 V
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching ...
Voltage: 1,200 V
Current: 600 A
Littelfuse IGBT modules offer high efficiency and fast switching speeds of modern IGBT technology in a robust and flexible format. Used for power control applications, Littelfuse offers an expanded portfolio ...
Current: 0 A - 10 A
The Renesas transistors support a wide array of applications from the ones requiring ultra-small size to large current or amplification applications. Furthermore, with tremendous efforts, the size of the chip was minimized ...
Voltage: 7.5 V
... band handheld radio Output stage for 700-800 MHz handheld radio Generic 6 W driver for ISM and broadcast final stage transistors
Voltage: 110, 265 V
TOPSwitch-HX incorporates a 700 V power MOSFET, high voltage switched current source, PWM control, oscillator, thermal shutdown circuit, fault protection and other control circuitry onto a monolithic device. Lower System Cost, Higher ...
Vishay is the world’s number-one manufacturer of low-power MOSFETs. The Vishay Siliconix power MOSFET product line includes devices in more than 30 package types, including the chipscale MICRO FOOT® and thermally advanced PowerPAK® families. ...
... for new designs HousingSEMITOP 3 (55x31x12) (LLxBBxHH)55x31x12 SwitchesSix Pack VCES in V600 ICnom in A6 TechnologyNPT IGBT (Ultrafast)
Voltage: 1,200 V
Current: 10, 25 A
Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate ...
Voltage: 1,200 V
Current: 40 A
•Short Circuit Rated>10jjs •Low Saturation Voltage: Vce (sat) = 2.15V @ lc = 40A , Tc=25'C •Low Switching Loss •100% RBSOA Tested(2*lc> •Low Stray Inductance •Lead Free, CompliantwithRoHS Requirement Applications: •Industrial ...
Voltage: 1,350 V
Current: 25 A
Rongtech Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as inductive heating, microwave oven, etc. FEATURES •High breakdown voltage to 1350V ...
Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged eXtreme-light Punch Through (XPT™) design results in: - short circuit rated for 10µs. - very low gate charge - low EMI - ...
... Silicon Bipolar RF Transistors and GaAs FETs. The GaAs FET RF transistors are ideal for the first or second stage of base station LNA due to the excellent combination of low noise figure and enhanced ...
Voltage: 1,700 V
Current: 24 A
High voltage NPN power transistor for high definition and new super slim CRT displays The device uses a Diffused Collector in Planar technology adopting ”Enhanced High Voltage Structure” (EHVS1) developed to fit High-Definition ...
Voltage: 250, 500 V
Current: 10, 43 A
FAIRCHILD presents their newest line of automotive ignition with IGBT. It is specially designed to have the highest clamp energy density of all devices on the market and low saturation voltage. Provides optimum performance and caters ...
Voltage: 45 V
The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier ...
Voltage: 50 V
Current: 0.8 A
DC Current Gain hFE Max.:400 DC Current Gain hFE Min.:160 Description:TO-92, 50V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO (V):50 VCE ...
Voltage: 0.24 V - 3.5 V
NPN, PNP, and Complementary Transistors Broad portfolio of bipolar NPN and PNP transistors.
Voltage: 20, 50 V
N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ...
Voltage: 2.7 V
Current: 1 mA - 20 mA
Features Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at ...
Voltage: 8 V - 35 V
Bluetooth Module is a transition module of data communication between mobile and genset. It is connected with genset controller via RS485. By mobile APP genset information can be obtained and genset start/stop can be controlled. PERFORMANCE ...
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A transistor is a three-terminal semiconductor device used to switch or amplify electronic signals and power.Applications
Bipolar technology is used in analog and power electronics, especially for current amplification and voltage regulation. MOFSET transistors work well in power and high-voltage switching, motor control and in switched mode power supplies.Technologies
Bipolar and field-effect (FET) transistors work differently. The former is base-current controlled, while the latter is grid-voltage controlled. They differ in the nature of the voltage drop in the controlled circuit. Bipolar models have a minimal drop between semiconductor junctions. FETs have very low output resistance, on the order of several milliohms.
Bipolar transistors are n- or p-type, depending on control current direction at the base. N-channel FETs offer better performance than p-channel models with negative-source voltage control. There are other types of transistors: those used for radio frequency and high-frequency applications, high-gain Darlington transistors, IGBTs and JFETs.
Choice will primarily depend on current and voltage specifications, frequency limits and packaging.
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