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Current: 95 A
Voltage: 40 V
RH6G040BG is a power MOSFET with low-on resistance and High power package, suitable for switching. Low on - resistance High Power small mold Package(HSMT8) Pb-free plating ; RoHS compliant Halogen Free
ROHM Semiconductor
Current: 60 A
Voltage: 150 V
RS6R060BH is a power MOSFET with low-on resistance and High power package, suitable for switching Low on - resistance High power package(HSOP8) Pb-free plating ; RoHS compliant Halogen free 100% Rg and UIS tested
ROHM Semiconductor
Current: 210 A
Voltage: 40 V
RS6G120BG is a power MOSFET with low-on resistance and High power package, suitable for switching. Low on - resistance High power package (HSOP8) Pb-free plating ; RoHS compliant Halogen free 100% Rg and UIS tested
ROHM Semiconductor
QC962-8A is a hybrid integrated IGBT driver designed for driving N-channel IGBT modules in any gate amplifier application. The device provides the required electrical isolation between input and output ...
QP12W05S-37 is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated ...
Current: 25 mA
Voltage: 13 V
FEATURES - Built-in isolated DC-DC power supply; Single power supply drive topology - High isolation voltage of 3750VAC - Input signal frequency up to 20kHz - Built-in fault circuit with a pin for fault feedback - Drive signal ignored ...
Voltage: 1,700, 2,500, 4,500 V
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching ...
Current: 600 A
Voltage: 1,200 V
Littelfuse IGBT modules offer high efficiency and fast switching speeds of modern IGBT technology in a robust and flexible format. Used for power control applications, Littelfuse offers an expanded portfolio ...
Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio frequency (RF) and power supply devices.
Current: -16.4 A
Voltage: -60 V
P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, load switch and ...
Infineon Technologies AG
Current: 3,000, 1,300, 2,000 A
Voltage: 4,500, 5,200 V
StakPak is a family of high power insulated gate bipolar transistor (IGBT) press-packs and diodes in an advanced modular housing that guarantees uniform chip pressure in multiple-device stacks. Although the most common ...
Current: -0.5 A
Voltage: -50 V
50A02CH is Bipolar Transistor, Low VCE(sat), PNP Single for low frequency General-Purpose Amplifier Application. Applications Low-Frequency Amplifier High Speed Switching Small Motor Drive Muting Circuit Features High ...
Fairchild Semiconductor
Current: 0.8 A
Voltage: 50 V
DC Current Gain hFE Max.:400 DC Current Gain hFE Min.:160 Description:TO-92, 50V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO (V):50 VCE ...
Voltage: 110, 265 V
TOPSwitch-HX incorporates a 700 V power MOSFET, high voltage switched current source, PWM control, oscillator, thermal shutdown circuit, fault protection and other control circuitry onto a monolithic device. Lower System Cost, Higher ...
Power Integrations
Current: 25 mA
Voltage: 20 V
Collector Emitter Voltage - Vceo 20 V DC Collector Current - Ic - 25 mA Polarity - pol - NPN Power Dissipation - Ptot - 0.200 W Junction Temperature - Tjmax - 150 °C DC Current Gain - hfe - 85 - VcE - 10V - Ic - 7 mA Collector Saturation ...
Diotec
Current: 200 mA
Voltage: 40 mV
Typical Applications Signal processing, Switching, Amplification Commercial grade l) Features General Purpose Compliant to RoHS, REACH, Conflict Minerals *)
Diotec
Current: 100 mA
Voltage: 65, 45, 30 V
Typical Applications Signal processing Switching Amplification Commercial / industrial grade Suffix -Q: AEC-Q101 compliantx) Suffix -AQ: in AEC-Q101 qualification *) Features General Purpose Three current gain groups Compliant to RoHS ...
Diotec
... Silicon Bipolar RF Transistors and GaAs FETs. The GaAs FET RF transistors are ideal for the first or second stage of base station LNA due to the excellent combination of low noise figure and enhanced ...
Current: 1 mA - 20 mA
Voltage: 2.7 V
Features Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at ...
Broadcom
Automotive photocouplers (transistor output, IC output) are available in small packages with high dielectric strength (3.75KV) and high-temperature operation up to 135 °C. This facilitates customer design, including safety ...
Voltage: 7.5 V
... UHF band handheld radio Output stage for 700-800 MHz handheld radio Generic 6 W driver for ISM and broadcast final stage transistors
Current: 0.4 A - 45 A
Voltage: 36 V - 70 V
ST offers a wide range of automotive-grade smart 3 and 5-pin low-side switches (OMNIFET) based on VIPower (vertical intelligent power) technology. This proprietary technology allows integration of complete digital and analog control and ...
STMicroelectronics
Vishay is the world’s number-one manufacturer of low-power MOSFETs. The Vishay Siliconix power MOSFET product line includes devices in more than 30 package types, including the chipscale MICRO FOOT® and thermally advanced PowerPAK® families. ...
Voltage: 45 V
The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier ...
Central Semiconductor
Voltage: 0.24 V - 3.5 V
NPN, PNP, and Complementary Transistors Broad portfolio of bipolar NPN and PNP transistors.
... designs HousingMiniSKiiP II 1 (42x40x16) (LLxBBxHH)42x40x16 SwitchesSeven Pack VCES in V600 ICnom in A6 TechnologyNPT IGBT (Ultrafast)
SEMIKRON
Current: 10 A - 1,600 A
Voltage: 600 V - 1,700 V
Greegoo offers IGBT (insulated-gate bipolar transistor) modules in different topologies, current and voltage ratings. Starting from 15A to 1600A in voltage classes from 600V to 1700V, the IGBT ...
Current: 2 A
Voltage: 36 V
With this MOSFET, you can control a voltage of up to 36 Volts. With the pulse width modulation, the rootmean-square voltage can be lowered (f.e. to dim a LED light). COMPATIBLE WITH Arduino, Raspberry Pi, etc. CONTROL VOLTAGE min. ...
Current: 10, 25 A
Voltage: 1,200 V
Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate ...
Rongtech Industry (Shanghai) Inc.,
Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged eXtreme-light Punch Through (XPT™) design results in: - short circuit rated for 10µs. - very low gate charge - low EMI - ...
IXYS
Voltage: 20, 50 V
N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ...
Diodes Incorporated
Voltage: 8 V - 35 V
Bluetooth Module is a transition module of data communication between mobile and genset. It is connected with genset controller via RS485. By mobile APP genset information can be obtained and genset start/stop can be controlled. PERFORMANCE ...
A transistor is a three-terminal semiconductor device used to switch or amplify electronic signals and power.
ApplicationsBipolar technology is used in analog and power electronics, especially for current amplification and voltage regulation. MOFSET transistors work well in power and high-voltage switching, motor control and in switched mode power supplies.
TechnologiesBipolar and field-effect (FET) transistors work differently. The former is base-current controlled, while the latter is grid-voltage controlled. They differ in the nature of the voltage drop in the controlled circuit. Bipolar models have a minimal drop between semiconductor junctions. FETs have very low output resistance, on the order of several milliohms.
Bipolar transistors are n- or p-type, depending on control current direction at the base. N-channel FETs offer better performance than p-channel models with negative-source voltage control. There are other types of transistors: those used for radio frequency and high-frequency applications, high-gain Darlington transistors, IGBTs and JFETs.
Choice will primarily depend on current and voltage specifications, frequency limits and packaging.
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