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bipolar transistor / small-signal / with built-in bias resistors / digital
bipolar transistor
DTA Series

Voltage: 0.1, 0.5, 1 V

Digital transistors are invented by Rohm first in the market, which is the transistor combining built-in resistor(s) for convenience of digital circuit. This product segment is becoming further extensive ...

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ROHM Semiconductor
bipolar transistor / power / silicon
bipolar transistor
2S series

Voltage: 0 V - 400 V
Current: 0 A - 6 A

Available in the variety of packages having the nature such as small-signal, thin and high-powerto cover the market extensively.

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ROHM Semiconductor
MOSFET transistor / power / silicon
MOSFET transistor
HS8K11

Voltage: 30 V
Current: 0 A - 44 A

HS8K11 is standard MOSFET for switching application. Features · Low on-resistance. · Pb-free lead plating; RoHS compliant. · Halogen Free. Specifications Package Code: HSML3030L10 Number of terminal:10 Polarity: Nch+Nch ...

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ROHM Semiconductor
IGBT transistor module
IGBT transistor module
MG12600WB-BR2MM series

Voltage: 1,200 V
Current: 600 A

Littelfuse IGBT modules offer high efficiency and fast switching speeds of modern IGBT technology in a robust and flexible format. Used for power control applications, Littelfuse offers an expanded portfolio ...

IGBT transistor module / power
IGBT transistor module

Voltage: 1,200 V
Current: 10, 25 A

Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate ...

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Rongtech Industry (Shanghai) Inc.,
IGBT transistor module / power
IGBT transistor module
GTS40FB120T5HB

Voltage: 1,200 V
Current: 40 A

•Short Circuit Rated>10jjs •Low Saturation Voltage: Vce (sat) = 2.15V @ lc = 40A , Tc=25'C •Low Switching Loss •100% RBSOA Tested(2*lc> •Low Stray Inductance •Lead Free, CompliantwithRoHS Requirement Applications: •Industrial ...

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Rongtech Industry (Shanghai) Inc.,
IGBT transistor / power
IGBT transistor
RGW25N135F1A

Voltage: 1,350 V
Current: 25 A

Rongtech Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as inductive heating, microwave oven, etc. FEATURES •High breakdown voltage to 1350V ...

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Rongtech Industry (Shanghai) Inc.,
IGBT transistor / power
IGBT transistor

Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged eXtreme-light Punch Through (XPT™) design results in: - short circuit rated for 10µs. - very low gate charge - low EMI - ...

IGBT transistor module
IGBT transistor module

Features: Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - ...

MOSFET transistor / power
MOSFET transistor

Features Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 40 pF) Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking ...

bipolar transistor / power / small-signal / silicon
bipolar transistor
BCX51

Voltage: 45 V

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general ...

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Central Semiconductor
NPN transistor / MOSFET / small-signal / double
NPN transistor
CMKT3920

Voltage: 60, 50, 7 V
Current: 200 mA

DESCRIPTION: The Central Semiconductor CMKT3920 (two single NPN transistors) is a dual combination in a space saving SOT-363 ULTRAmini™ package, designed for small signal general purpose amplifier and switching applications. MARKING ...

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Central Semiconductor
bipolar transistor / small-signal / silicon / low-noise
bipolar transistor
CMPT5086

Voltage: 50, 3 V
Current: 50 mA

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5086B, and CMPT5087 are silicon PNP transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring ...

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Central Semiconductor
IGBT transistor module
IGBT transistor module
900 A, 1200 V | IAP900D120

The SixPacTM from Applied Power Systems is a configurable IGBT based power stage that is configured as a half-bridge for many high power applications. The IAP900D120 and IAPL900D120H can be used as a chopper for motor ...

IGBT transistor module
IGBT transistor module
1000 A, 1700V | IAP1000D170

The SixPacTM from Applied Power Systems is a configurable IGBT based power stage that is configured as a half-bridge for many high power applications. The IAP1000D170 can be used as a chopper for motor braking or two ...

MOSFET transistor / power / switching / avalanche
MOSFET transistor
IPD900P06NM

P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications Description: OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, ...

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Infineon Technologies - Sensors
power transistor module
power transistor module
AFM906N

Voltage: 7.5 V

... band handheld radio Output stage for 700-800 MHz handheld radio Generic 6 W driver for ISM and broadcast final stage transistors

MOSFET transistor / power / for automotive applications
MOSFET transistor
VND series

ST offers a wide range of automotive-grade smart 3 and 5-pin low-side switches (OMNIFET) based on VIPower (vertical intelligent power) technology. This proprietary technology allows integration of complete digital and analog control and ...

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STMicroelectronics
bipolar transistor / power
bipolar transistor

The Renesas transistors support a wide array of applications from the ones requiring ultra-small size to large current or amplification applications. Furthermore, with tremendous efforts, the size of the chip was minimized ...

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Renesas Electronics
IGBT transistor / power
IGBT transistor
FG, ISL9 series

Voltage: 250, 500 V
Current: 10, 43 A

FAIRCHILD presents their newest line of automotive ignition with IGBT. It is specially designed to have the highest clamp energy density of all devices on the market and low saturation voltage. Provides optimum performance and caters ...

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Fairchild Semiconductor
bipolar transistor / power
bipolar transistor

Voltage: 20 V
Current: 100, 82 A

Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices.

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Toshiba America Electronics Components
HEMT transistor / power / GaAs
HEMT transistor
TGF2018

Voltage: 8 V
Current: 29 mA

Key Features Frequency Range: DC - 20 GHz 22 dBm Typical Output Power - P1dB 14 dB Typical Gain @ 12 GHz 55% PAE Typical @ 12 GHz 1.0 dB Typical NF @12 GHz No Vias Technology: 0.25 um GaAs pHEMT Qorvo's TGF2018 is a discrete ...

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Triquint Semiconductor
bipolar transistor / small-signal / switching
bipolar transistor
BC337-25

Voltage: 50 V
Current: 0.8 A

DC Current Gain hFE Max.:400 DC Current Gain hFE Min.:160 Description:TO-92, 50V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO (V):50 VCE ...

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Taiwan Semiconductor
IGBT transistor module
IGBT transistor module
SK 9 BGD 065 ET

... for new designs HousingSEMITOP 3 (55x31x12) (LLxBBxHH)55x31x12 SwitchesSix Pack VCES in V600 ICnom in A6 TechnologyNPT IGBT (Ultrafast)

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SEMIKRON
bipolar transistor / power
bipolar transistor

Voltage: 3.5 V - 350 V
Current: 0.04 A - 16 A

Audio transistors for high power audio circuits.

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ON Semiconductor
IGBT transistor module
IGBT transistor module

Vishay’s IGBT modules are available with several different configurations, including half-bridge, full-bridge, chopper, and 6PAK inverter. A wide collector current range, up to 200 A, is available.

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VISHAY
RF transistor
RF transistor
AT-31033

Voltage: 2.7 V
Current: 1 mA - 10 mA

Features Microcurrent device offering good RF performance at 1mA-10mA. The AT-310XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=0.9dB, Gain=13dB at 3V, 1mA; P1dB= 9dBm ...

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Broadcom
FET transistor / field-effect / power / low-noise
FET transistor

... Silicon Bipolar RF Transistors and GaAs FETs. The GaAs FET RF transistors are ideal for the first or second stage of base station LNA due to the excellent combination of low noise figure and enhanced ...

IGBT transistor module
IGBT transistor module
TIM series

Feature - Soft punch through silicon - Isolated MMC base with AIN substrate - High thermal cycling capability Main Applications - General chopper - General inverter - PWM rectifier - Power system compensator - Motor drive equipment - ...

IGBT transistor module
IGBT transistor module
600V, 800A

IGBT Module · Hermetic Core Construction for operation up to 800A · Altitude Operation to 50K feet · High Frequency Switching Operation at Temp Extremes · Internal Layout with minimized ...

bipolar transistor / MOSFET / switching
bipolar transistor
DMB series

Voltage: 20, 50 V

N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ...

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Diodes Incorporated
MOSFET transistor / power
MOSFET transistor
700 V | TOPSwitch-HX

Voltage: 110, 265 V

Description: TOPSwitch-HX incorporates a 700 V power MOSFET, high voltage switched current source, PWM control, oscillator, thermal shutdown circuit, fault protection and other control circuitry onto a monolithic device. Lower System ...

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Power Integrations
IGBT transistor module
IGBT transistor module
QC962-8A

QC962-8A is a hybrid integrated IGBT driver designed for driving N-channel IGBT modules in any gate amplifier application. The device provides the required electrical isolation between input and output ...

IGBT transistor module
IGBT transistor module
QP12W05S-37

QP12W05S-37 is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated ...

How to choose this product

transistor

A transistor is a three-terminal semiconductor device used to switch or amplify electronic signals and power.

Applications

Bipolar technology is used in analog and power electronics, especially for current amplification and voltage regulation. MOFSET transistors work well in power and high-voltage switching, motor control and in switched mode power supplies.

Technologies

Bipolar and field-effect (FET) transistors work differently. The former is base-current controlled, while the latter is grid-voltage controlled. They differ in the nature of the voltage drop in the controlled circuit. Bipolar models have a minimal drop between semiconductor junctions. FETs have very low output resistance, on the order of several milliohms.

Bipolar transistors are n- or p-type, depending on control current direction at the base. N-channel FETs offer better performance than p-channel models with negative-source voltage control. There are other types of transistors: those used for radio frequency and high-frequency applications, high-gain Darlington transistors, IGBTs and JFETs.

How to choose

Choice will primarily depend on current and voltage specifications, frequency limits and packaging.