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Current: 0.05 A
Voltage: 12 V
... NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced ...
Voltage: 11 V
... gain for RF switching applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP capable (Note 4) Applications • ...
GaN HEMTs, GaAs FETs , MMICs, and low-noise HEMT solutions offer high performance and uncompromised reliability for radar, base stations, SATCOM, point to point, and space applications.
Current: 1 mA - 20 mA
Voltage: 2.7 V
... Features Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; ...
Broadcom
... noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS base station and other wireless RF applications, high part-to-part consistency, and excellent reliability. The ATF-33143 is packaged in the ...
Broadcom
ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 surface mount plastic package.
Broadcom
... single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 6 GHz frequency range. ...
Broadcom
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