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FET transistor ATF-33143
RFGaAslow-noise

FET transistor - ATF-33143 - Broadcom - RF / GaAs / low-noise
FET transistor - ATF-33143 - Broadcom - RF / GaAs / low-noise
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Characteristics

Type
FET
Other characteristics
RF, GaAs, low-noise

Description

Features Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS base station and other wireless RF applications, high part-to-part consistency, and excellent reliability. The ATF-33143 is packaged in the miniature SOT-343 package. NF=0.5dB, Ga=15dB, P1dB= 22dBm, and OIP3=33.5dBm at 4V, 80mA (2 GHz )

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Exhibitions

Meet this supplier at the following exhibition(s):

ELECTRONICA 2026
ELECTRONICA 2026

10-13 Nov 2026 Munich (Germany) Hall C2 - Stand 645

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