HEMT transistor GNP1070TC-Z
powerswitchingresistance

HEMT transistor
HEMT transistor
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Characteristics

Type
HEMT
Technology
power, switching
Other characteristics
resistance
Current

20 A

Voltage

650 V

Description

GNP1070TC-Z is an 650V GaN HEMT which has achieved the industry's highest class FOM (Ron*Ciss、Ron*Coss). It is a product of the EcoGaN™ series that contributes to power conversion efficiency and size reduction by making the best use of low ON resistance and high-speed switching. ESD protection function is built in for high-reliability design. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting. Overview This product deliver industry-leading performance in terms of RDS(ON) × Ciss / RDS(ON) × Coss, a figure of merit for GaN HEMTs, translating to higher efficiency in power supply systems. At the same time, a built-in ESD protection element improves electrostatic breakdown resistance up to 3.5kV, leading to higher application reliability. GaN HEMTs’ high-speed switching characteristics also contribute to greater miniaturization of peripheral components. Application Examples Ideal for a broad range of power supply systems in industrial equipment and consumer devices, including servers and AC adapters

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